Growth and Photoluminescence of GaAs Quantum Dot on Si(100)
ZHANG Jian-Guo, LI Guang-Hai, ZHANG Yong, JIN Yun-Xia, ZHANG Li-De
Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031
Growth and Photoluminescence of GaAs Quantum Dot on Si(100)
ZHANG Jian-Guo;LI Guang-Hai;ZHANG Yong;JIN Yun-Xia;ZHANG Li-De
Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031
关键词 ：
81.65.Cf ,
81.15.Cd ,
81.05.Ea
Abstract ： GaAs quantum dots(QDs) with high density and remarkable uniformity in dot size and distribution grown on Si(100) surface with artificial topography by radio-frequency sputtering have been demonstrated. The photoluminescence spectrum has been recorded. The growth of GaAs QDs is initiated with the preferential nucleation of small dots along ripples controlled by the Stranski-Krastanow growth mode. This method may be useful in combining high-speed and optoelectronic GaAs devices with Si integrated-circuit technology.
Key words ：
81.65.Cf
81.15.Cd
81.05.Ea
出版日期: 2001-07-01
引用本文:
ZHANG Jian-Guo;LI Guang-Hai;ZHANG Yong;JIN Yun-Xia;ZHANG Li-De. Growth and Photoluminescence of GaAs Quantum Dot on Si(100)
[J]. 中国物理快报, 2001, 18(7): 989-990.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2001/V18/I7/989
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