Effect of Reactor Pressure on Qualities of GaN Layers Grown by Hydride Vapour Phase Epitaxy
QIU Kai1, YIN Zhi-Jun1, LI Xin-Hua1, ZHONG Fei1, JI Chang-Jian1, HAN Qi-Feng1, CAO Xian-Cun1, CHEN Jia-Rong1, LUO Xiang-Dong2, WANG Yu-Qi1
1Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 2300312Jiangsu Provincial Key Lab of ASIC Design, Nantong University, Nantong 226007
Effect of Reactor Pressure on Qualities of GaN Layers Grown by Hydride Vapour Phase Epitaxy
1Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 2300312Jiangsu Provincial Key Lab of ASIC Design, Nantong University, Nantong 226007
摘要The influence of reactor pressure on GaN layers grown by hydride vapour phase epitaxy (HVPE) is investigated. By decreasing the reactor pressure from 0.7 to 0.5atm, the GaN layer growth mode changes from the island-like one to the step flow. The improvements in structural and optical properties and surface morphology of GaN layers are observed in the step flow growth mode. The results clearly indicate that the reactor pressure, similarly to the growth temperature, is one of the important parameters to influence the qualities of GaN epilayers grown by HVPE, due to the change of growth mode.
Abstract：The influence of reactor pressure on GaN layers grown by hydride vapour phase epitaxy (HVPE) is investigated. By decreasing the reactor pressure from 0.7 to 0.5atm, the GaN layer growth mode changes from the island-like one to the step flow. The improvements in structural and optical properties and surface morphology of GaN layers are observed in the step flow growth mode. The results clearly indicate that the reactor pressure, similarly to the growth temperature, is one of the important parameters to influence the qualities of GaN epilayers grown by HVPE, due to the change of growth mode.
QIU Kai;YIN Zhi-Jun;LI Xin-Hua;ZHONG Fei;JI Chang-Jian;HAN Qi-Feng;CAO Xian-Cun;CHEN Jia-Rong;LUO Xiang-Dong;WANG Yu-Qi. Effect of Reactor Pressure on Qualities of GaN Layers Grown by Hydride Vapour Phase Epitaxy[J]. 中国物理快报, 2007, 24(5): 1390-1392.
QIU Kai, YIN Zhi-Jun, LI Xin-Hua, ZHONG Fei, JI Chang-Jian, HAN Qi-Feng, CAO Xian-Cun, CHEN Jia-Rong, LUO Xiang-Dong, WANG Yu-Qi. Effect of Reactor Pressure on Qualities of GaN Layers Grown by Hydride Vapour Phase Epitaxy. Chin. Phys. Lett., 2007, 24(5): 1390-1392.
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2007, Vol. 24 
