摘要Nanocrystalline Si/SiO2 multilayers are prepared by thermally annealing amorphous Si/SiO2 stacked structures. The photoluminescence intensity is obviously enhanced after hydrogen passivation at various temperatures. It is suggested that the hydrogen trapping and detrapping processes at different temperatures strongly influence the passivation effect. Direct experimental evidence is given by electron spin resonance spectra that hydrogen effectively reduces the nonradiative defect states existing in the Si nanocrystas/SiO2 system which enhances the radiative recombination probability. The luminescence characteristic shows its stability after hydrogen passivation even after aging eight months.
Abstract：Nanocrystalline Si/SiO2 multilayers are prepared by thermally annealing amorphous Si/SiO2 stacked structures. The photoluminescence intensity is obviously enhanced after hydrogen passivation at various temperatures. It is suggested that the hydrogen trapping and detrapping processes at different temperatures strongly influence the passivation effect. Direct experimental evidence is given by electron spin resonance spectra that hydrogen effectively reduces the nonradiative defect states existing in the Si nanocrystas/SiO2 system which enhances the radiative recombination probability. The luminescence characteristic shows its stability after hydrogen passivation even after aging eight months.
[1] Canham L T 1990 Appl. Phys. Lett. 57 1046 [2] Chen K J, Huang X F, Xu J and Feng D 1992 Appl.Phys. Lett. 61 2069 [3] Pavesi L, Dal Negro L, Mazzoleni C, Franzo G and Priolo F 2000 Nature 408 440 [4] Cen Z H, Xu J, Liu Y S, Han P G, Li W, Huang X F and Chen K J 2006 Chin. Phys. Lett. 23 1029 [5] Qian B, Chen S, Cen Z H, Chen K J, Liu Y S, Xu J, Ma Z Y, Li W andHuang X F 2006 Chin. Phys. Lett. 23 1302 [6] Prokes S M, Carlos W E and Glembocki O J 1994 Phys.Rev. B 50 17093 [7] Prokes S M, Carlos W E, Veprek S and Ossadiik C 1998 Phys. Rev. B 58 15632 [8] Wolkin M V, Jorne J, Fauchet P M, Allan G and Delerue C 1999 Phys. Rev. Lett. 82 197 [9] Neufeld E, Wang S, Apetz R, Buchal C, Carius R, White C W andThomas D K 1997 Thin Solid Films 294 238 [10] Withrow S P, White C W, Meldrum A and Budai J D 1999 J.Appl. Phys. 86 396 [11] Rui Y J, Chen D Y, Xu J, Zhang Y J, Yang L, Mei J X, Ma Z Y, Cen ZH, Li W, Xu L, Huang X F and Chen K J 2005 J. Appl. Phys. 98 033532 [12] Mei J X, Rui Y J and Xu J 2004 Solid State Commun. 131701 [13] Sato K, Izumi T, Iwase M, Show Y, Morisaki H, Yaguchi T and KaminoT 2003 Appl. Surf. Sci. 216 376 [14] Sato K and Kenji H 2005 J. Appl. Lett. 97 104326 [15] Sato K, Sugiyama Y, Iwase M, Izumi T, Show Y, Nozaki S andMorisaki H 1999 Mater. Res. Soc. Symp. Proc. 536 57 [16] Fauchet P M, Tsybeskov L, Duttagupta S P and Hirschman K D 1997 Thin Solid Films 297 254
2007, Vol. 24 
