Chin. Phys. Lett.  2022, Vol. 39 Issue (4): 044203    DOI: 10.1088/0256-307X/39/4/044203
FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
Laser-Induced Electron Fresnel Diffraction in Tunneling and Over-Barrier Ionization
Lei Geng1, Hao Liang1, and Liang-You Peng1,2,3,4*
1State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
2Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
3Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
4Beijing Academy of Quantum Information Sciences, Beijing 100193, China
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Lei Geng, Hao Liang, and Liang-You Peng 2022 Chin. Phys. Lett. 39 044203
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Abstract Photoelectron momentum distribution in strong-field ionization has a variety of structures that reveal the complicated dynamics of this process. Recently, we identified a low-energy interference structure in the case of a super-intense extreme ultraviolet (XUV) laser pulse and attributed it to the laser-induced electron Fresnel diffraction. This structure is determined by the laser-induced electron displacement [Geng et al. Phys. Rev. A 104 (2021) L021102]. In the present work, we find that the Fresnel diffraction picture also appears in the tunneling and over-barrier regime of ionization by short pulses. However, the electron displacement is now induced by the electric field component of the laser pulse rather than the magnetic field component in the case of the super-intense XUV pulse. After corresponding modifications to our quantum and semiclassical models, we find that the same physical mechanism of the Fresnel diffraction governs the low-energy interference structures along the laser polarization. The results predicted by the two models agree well with the accurate results from the numerical solution to the time-dependent Schrödinger equation.
Received: 11 January 2022      Editors' Suggestion Published: 28 March 2022
PACS:  42.82.-m (Integrated optics)  
  42.79.-e (Optical elements, devices, and systems)  
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http://cpl.iphy.ac.cn/10.1088/0256-307X/39/4/044203       OR      http://cpl.iphy.ac.cn/Y2022/V39/I4/044203
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Lei Geng
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