| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Interfacial Charge Transfer Induced Electronic Property Tuning of MoS$_{2}$ by Molecular Functionalization |
| Si-Han Zhou , Chun-Wei Zhou , Xiang-Dong Yang , Yang Li , Jian-Qiang Zhong*, and Hong-Ying Mao* |
| Department of Physics, Hangzhou Normal University, Hangzhou 311121, China |
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| Cite this article: |
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Si-Han Zhou , Chun-Wei Zhou , Xiang-Dong Yang et al 2021 Chin. Phys. Lett. 38 057305 |
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Abstract The modulation of electrical properties of MoS$_{2}$ has attracted extensive research interest because of its potential applications in electronic and optoelectronic devices. Herein, interfacial charge transfer induced electronic property tuning of MoS$_{2}$ are investigated by in situ ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy measurements. A downward band-bending of MoS$_{2}$-related electronic states along with the decreasing work function, which are induced by the electron transfer from Cs overlayers to MoS$_{2}$, is observed after the functionalization of MoS$_{2}$ with Cs, leading to n-type doping. Meanwhile, when MoS$_{2}$ is modified with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane ($F_{4}$-TCNQ), an upward band-bending of MoS$_{2}$-related electronic states along with the increasing work function is observed at the interfaces. This is attributed to the electron depletion within MoS$_{2}$ due to the strong electron withdrawing property of $F_{4}$-TCNQ, indicating p-type doping of MoS$_{2}$. Our findings reveal that surface transfer doping is an effective approach for electronic property tuning of MoS$_{2}$ and paves the way to optimize its performance in electronic and optoelectronic devices.
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Received: 25 November 2020
Published: 02 May 2021
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| Fund: Supported by the National Natural Science Foundation of China (Grant No. 22002031), the Natural Science Foundation of Zhejiang Province (Grant No. LY18F010019), and the Innovation Project in Hangzhou for Returned Scholar. |
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