| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Transforming a Two-Dimensional Layered Insulator into a Semiconductor or a Highly Conductive Metal through Transition Metal Ion Intercalation |
| Xiu Yan1,2, Wei-Li Zhen1, Shi-Rui Weng1, Ran-Ran Zhang1, Wen-Ka Zhu1*, Li Pi1,2*, and Chang-Jin Zhang1,3* |
1High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
2University of Science and Technology of China, Hefei 230026, China
3Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
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| Cite this article: |
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Xiu Yan, Wei-Li Zhen, Shi-Rui Weng et al 2021 Chin. Phys. Lett. 38 057304 |
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Abstract Atomically thin two-dimensional (2D) materials are the building bricks for next-generation electronics and optoelectronics, which demand plentiful functional properties in mechanics, transport, magnetism and photoresponse. For electronic devices, not only metals and high-performance semiconductors but also insulators and dielectric materials are highly desirable. Layered structures composed of 2D materials of different properties can be delicately designed as various useful heterojunction or homojunction devices, in which the designs on the same material (namely homojunction) are of special interest because preparation techniques can be greatly simplified and atomically seamless interfaces can be achieved. We demonstrate that the insulating pristine ZnPS$_{3}$, a ternary transition-metal phosphorus trichalcogenide, can be transformed into a highly conductive metal and an n-type semiconductor by intercalating Co and Cu atoms, respectively. The field-effect-transistor (FET) devices are prepared via an ultraviolet exposure lithography technique. The Co-ZnPS$_{3}$ device exhibits an electrical conductivity of $8\times10^{4}$ S/m, which is comparable to the conductivity of graphene. The Cu-ZnPS$_{3}$ FET reveals a current ON/OFF ratio of 10$^{5}$ and a mobility of $3\times10^{-2}$ cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$. The realization of an insulator, a typical semiconductor and a metallic state in the same 2D material provides an opportunity to fabricate n-metal homojunctions and other in-plane electronic functional devices.
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Received: 05 February 2021
Published: 02 May 2021
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| Fund: Supported by the National Key Research and Development Program of China (Grant Nos. 2017YFA0403600 and 2016YFA0300404), the National Natural Science Foundation of China (Grant Nos. 11874363, 11974356 and U1932216), and the Collaborative Innovation Program of Hefei Science Center, CAS (Grant No. 2019HSC-CIP002). |
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