| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Electronic Evolution from the Parent Mott Insulator to a Superconductor in Lightly Hole-Doped Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ |
| Qiang Gao1,2, Lin Zhao1*, Cheng Hu1,2, Hongtao Yan1,2, Hao Chen1,2, Yongqing Cai1,2, Cong Li1,2, Ping Ai1,2, Jing Liu1,2,3, Jianwei Huang1,2, Hongtao Rong1,2, Chunyao Song1,2, Chaohui Yin1,2, Qingyan Wang1, Yuan Huang1, Guo-Dong Liu1,2,4, Zu-Yan Xu5, and Xing-Jiang Zhou1,2,3,4* |
1National Lab for Superconductivity, Beijing National laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
2School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
3Beijing Academy of Quantum Information Sciences, Beijing 100193, China
4Songshan Lake Materials Laboratory, Dongguan 523808, China
5Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
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| Cite this article: |
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Qiang Gao, Lin Zhao, Cheng Hu et al 2020 Chin. Phys. Lett. 37 087402 |
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Abstract High temperature superconductivity in cuprates is realized by doping the Mott insulator with charge carriers. A central issue is how such an insulating state can evolve into a conducting or superconducting state when charge carriers are introduced. Here, by in situ vacuum annealing and Rb deposition on the Bi$_2$Sr$_2$Ca$_{0.6}$Dy$_{0.4}$Cu$_2$O$_{8+\delta}$ (Bi2212) sample surface to push its doping level continuously from deeply underdoped ($T_{\rm c}=25$ K, doping level $p\sim0.066$) to the near-zero doping parent Mott insulator, angle-resolved photoemission spectroscopy measurements are carried out to observe the detailed electronic structure evolution in the lightly hole-doped region for the first time. Our results indicate that the chemical potential lies at about l eV above the charge transfer band for the parent state at zero doping, which is quite close to the upper Hubbard band. With increasing hole doping, the chemical potential moves continuously towards the charge transfer band and the band structure evolution exhibits a rigid band shift-like behavior. When the chemical potential approaches the charge transfer band at a doping level of $\sim$0.05, the nodal spectral weight near the Fermi level increases, followed by the emergence of the coherent quasiparticle peak and the insulator–superconductor transition. Our observations provide key insights in understanding the insulator–superconductor transition in doping the parent cuprate compound and for establishing related theories.
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Received: 22 May 2020
Published: 28 July 2020
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| PACS: |
74.25.Jb
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(Electronic structure (photoemission, etc.))
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79.60.-i
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(Photoemission and photoelectron spectra)
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74.72.Cj
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(Insulating parent compounds)
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| Fund: Supported by the National Natural Science Foundation of China (Grant Nos. 11888101, 11922414, and 11534007), the National Key Research and Development Program of China (Grant Nos. 2016YFA0300300 and 2017YFA0302900), the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant No. XDB25000000), the Youth Innovation Promotion Association of CAS (Grant No. 2017013), and the Research Program of Beijing Academy of Quantum Information Sciences (Grant No. Y18G06). |
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