| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Experimental Synthesis of Strained Monolayer Silver Arsenide on Ag(111) Substrates |
| Shuai Zhang1,2, Yang Song1,2, Hang Li1,2, Jin-Mei Li3, Kai Qian1,2, Chen Liu3, Jia-Ou Wang3, Tian Qian1, Yu-Yang Zhang1,2,4, Jian-Chen Lu5, Hong Ding1,2,4, Xiao Lin1,2,4**, Jinbo Pan1,2**, Shi-Xuan Du1,2,4, Hong-Jun Gao1,2,4** |
1Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
2School of Physical Sciences, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
3Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100190, China
4CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
5Kunming University of Science and Technology, Kunming 650500, China
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| Cite this article: |
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Shuai Zhang, Yang Song, Hang Li et al 2020 Chin. Phys. Lett. 37 068103 |
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Abstract Two-dimensional (2D) materials are playing more and more important roles in both basic sciences and industrial applications. For 2D materials, strain could tune the properties and enlarge applications. Since the growth of 2D materials on substrates is often accompanied by strain, the interaction between 2D materials and substrates is worthy of careful attention. Here we demonstrate the fabrication of strained monolayer silver arsenide (AgAs) on Ag(111) by molecular beam epitaxy, which shows one-dimensional stripe structures arising from uniaxial strain. The atomic geometric structure and electronic band structure are investigated by low energy electron diffraction, scanning tunneling microscopy, x-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy and first-principle calculations. Monolayer AgAs synthesized on Ag(111) provides a platform to study the physical properties of strained 2D materials.
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Received: 18 April 2020
Published: 26 May 2020
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| PACS: |
81.15.-z
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(Methods of deposition of films and coatings; film growth and epitaxy)
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81.05.Zx
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(New materials: theory, design, and fabrication)
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82.20.Wt
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(Computational modeling; simulation)
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| Fund: *Supported by the National Key Research & Development Program of China (Grant Nos. 2016YFA0202300 and 2018YFA0305800), the National Natural Science Foundation of China (Grant Nos. 61888102, 11604373, 61622116, and 51872284), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos. XDB30000000 and XDB28000000), and the University of Chinese Academy of Sciences. |
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