Chin. Phys. Lett.  2020, Vol. 37 Issue (6): 066401    DOI: 10.1088/0256-307X/37/6/066401
Pressure-Induced Topological and Structural Phase Transitions in an Antiferromagnetic Topological Insulator
Cuiying Pei1†, Yunyouyou Xia1,2,3†, Jiazhen Wu4, Yi Zhao1, Lingling Gao1, Tianping Ying4, Bo Gao5, Nana Li5, Wenge Yang5, Dongzhou Zhang6, Huiyang Gou5, Yulin Chen1,7,8, Hideo Hosono4, Gang Li1,8**, Yanpeng Qi1**
1School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
2Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
3University of Chinese Academy of Sciences, Beijing 100049, China
4Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama 226-8503, Japan
5Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, China
6Hawai'i Institute of Geophysics and Planetology, School of Ocean and Earth Science and Technology, University of Hawai'i at Manoa, Honolulu, Hawaii 96822, USA
7Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, UK
8ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 200031, China
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Cuiying Pei, Yunyouyou Xia, Jiazhen Wu et al  2020 Chin. Phys. Lett. 37 066401
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Abstract Recently, natural van der Waals heterostructures of (MnBi$_{2}$Te$_{4}$)$_{m}$(Bi$_{2}$Te$_{3}$)$_{n}$ have been theoretically predicted and experimentally shown to host tunable magnetic properties and topologically nontrivial surface states. We systematically investigate both the structural and electronic responses of MnBi$_{2}$Te$_{4}$ and MnBi$_{4}$Te$_{7}$ to external pressure. In addition to the suppression of antiferromagnetic order, MnBi$_{2}$Te$_{4}$ is found to undergo a metal–semiconductor–metal transition upon compression. The resistivity of MnBi$_{4}$Te$_{7}$ changes dramatically under high pressure and a non-monotonic evolution of $\rho (T)$ is observed. The nontrivial topology is proved to persist before the structural phase transition observed in the high-pressure regime. We find that the bulk and surface states respond differently to pressure, which is consistent with the non-monotonic change of the resistivity. Interestingly, a pressure-induced amorphous state is observed in MnBi$_{2}$Te$_{4}$, while two high-pressure phase transitions are revealed in MnBi$_{4}$Te$_{7}$. Our combined theoretical and experimental research establishes MnBi$_{2}$Te$_{4}$ and MnBi$_{4}$Te$_{7}$ as highly tunable magnetic topological insulators, in which phase transitions and new ground states emerge upon compression.
Received: 17 April 2020      Published: 09 May 2020
PACS:  64.70.Tg (Quantum phase transitions)  
  03.65.Vf (Phases: geometric; dynamic or topological)  
  07.35.+k (High-pressure apparatus; shock tubes; diamond anvil cells)  
Fund: Supported by the National Key Research and Development Program of China under Grant Nos. 2018YFA0704300 and 2017YFE0131300, the National Natural Science Foundation of China under Grant Nos. U1932217, 11974246, 11874263 and 10225417, and the Natural Science Foundation of Shanghai under Grant No. 19ZR1477300. The authors thank the support from Analytical Instrumentation Center (SPST-AIC10112914), SPST, ShanghaiTech University. This work was partially supported by Collaborative Research Project of Materials and Structures Laboratory, Tokyo Institute of Technology, Japan. Part of this research is supported by COMPRES (NSF Cooperative Agreement EAR-1661511).

?These authors contributed equally to this work.
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Cuiying Pei
Yunyouyou Xia
Jiazhen Wu
Yi Zhao
Lingling Gao
Tianping Ying
Bo Gao
Nana Li
Wenge Yang
Dongzhou Zhang
Huiyang Gou
Yulin Chen
Hideo Hosono
Gang Li
Yanpeng Qi
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