Chin. Phys. Lett.  2020, Vol. 37 Issue (4): 047301    DOI: 10.1088/0256-307X/37/4/047301
Anomalous Hall Effect in Layered Ferrimagnet MnSb$_{2}$Te$_{4}$
Gang Shi1,2, Mingjie Zhang1,2, Dayu Yan1,2, Honglei Feng1,2, Meng Yang1,2, Youguo Shi1,2**, Yongqing Li1,2**
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
2School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190
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Gang Shi, Mingjie Zhang, Dayu Yan et al  2020 Chin. Phys. Lett. 37 047301
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Abstract We report on low-temperature electron transport properties of MnSb$_{2}$Te$_{4}$, a candidate of ferrimagnetic Weyl semimetal. Long-range magnetic order is manifested as a nearly square-shaped hysteresis loop in the anomalous Hall resistance, as well as sharp jumps in the magnetoresistance. At temperatures below 4 K, a ${\rm ln}T$-type upturn appears in the temperature dependence of longitudinal resistance, which can be attributed to the electron-electron interaction (EEI), since the weak localization can be excluded by the temperature dependence of magnetoresistance. Although the anomalous Hall resistance exhibits a similar ${\rm ln}T$-type upturn in the same temperature range, such correction is absent in the anomalous Hall conductivity. Our work demonstrates that MnSb$_{2}$Te$_{4}$ microflakes provide an ideal system to test the theory of EEI correction to the anomalous Hall effect.
Received: 13 February 2020      Published: 24 March 2020
PACS:  73.23.-b (Electronic transport in mesoscopic systems)  
  75.47.-m (Magnetotransport phenomena; materials for magnetotransport)  
  75.70.Ak (Magnetic properties of monolayers and thin films)  
Fund: Supported by the National Natural Science Foundation of China under Grant Nos. 11961141011 and 61425015, the National Key Research and Development Program under Grant No. 2016YFA0300600, and the Strategic Priority Research Program of Chinese Academy of Sciences under Grant No. XDB28000000.
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Gang Shi
Mingjie Zhang
Dayu Yan
Honglei Feng
Meng Yang
Youguo Shi
Yongqing Li
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[24]Throughout this work, $R_{xx}$ refers to the sheet longitudinal resistance per square. The corresponding longitudinal resistivity is $\rho_{xx}$=$R_{xx}t$, where $t$ is the sample thickness
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