Chin. Phys. Lett.  2020, Vol. 37 Issue (4): 046101    DOI: 10.1088/0256-307X/37/4/046101
CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
Effects of Total-Ionizing-Dose Irradiation on Single-Event Burnout for Commercial Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors
Si-Yuan Chen1,2,3, Xin Yu1,2, Wu Lu1,2**, Shuai Yao1,2,3, Xiao-Long Li1,2,3, Xin Wang1,2, Mo-Han Liu1,2, Shan-Xue Xi1,2,3, Li-Bin Wang1,2, Jing Sun1,2, Cheng-Fa He1,2, Qi Guo1,2
1Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011
2Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011
3University of Chinese Academy of Sciences, Beijing 100049
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Si-Yuan Chen, Xin Yu, Wu Lu et al  2020 Chin. Phys. Lett. 37 046101
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Abstract We investigate the synergism effect of total ionizing dose (TID) on single-event burnout (SEB) for commercial enhancement-mode AlGaN/GaN high-electron mobility transistors. Our experimental results show that the slight degradation of devices caused by gamma rays can affect the stability of the devices during the impact of high energy particles. During heavy ion irradiation, the safe working values of drain voltage are significantly reduced for devices which have already been irradiated by $^{60}$Co gamma rays before. This could be attributed to more charges trapped caused by $^{60}$Co gamma rays, which make GaN devices more vulnerable to SEB. Moreover, the electrical parameters of GaN devices after $^{60}$Co gamma and heavy-ion irradiations are presented, such as the output characteristic curve, effective threshold voltages, and leakage current of drain. These results demonstrate that the synergistic effect of TID on SEB for GaN power devices does in fact exist.
Received: 17 November 2019      Published: 24 March 2020
PACS:  61.80.-x (Physical radiation effects, radiation damage)  
  85.30.Tv (Field effect devices)  
  84.30.Jc (Power electronics; power supply circuits)  
Fund: Supported by the National Natural Science Foundation of China under Grant Nos. U1532261, U1630141, and 61534008, and the West Light Foundation of Chinese Academy of Sciences under Grant No. 2018-XBQNXZ-B-003.
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http://cpl.iphy.ac.cn/10.1088/0256-307X/37/4/046101       OR      http://cpl.iphy.ac.cn/Y2020/V37/I4/046101
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Si-Yuan Chen
Xin Yu
Wu Lu
Shuai Yao
Xiao-Long Li
Xin Wang
Mo-Han Liu
Shan-Xue Xi
Li-Bin Wang
Jing Sun
Cheng-Fa He
Qi Guo
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