| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Performance Analyses of Planar Schottky Barrier MOSFETs with Dual Silicide Layers at Source/Drain on Bulk Substrates and Material Studies of ErSi$_{x}$/CoSi$_{2}$/Si Stack Interface |
| Bin Wang, Hao-Yu Kong, Lei Sun** |
Institute of Microelectronics, Peking University, Beijing 100871
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| Cite this article: |
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Bin Wang, Hao-Yu Kong, Lei Sun 2020 Chin. Phys. Lett. 37 038501 |
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Abstract A dual silicide layer structure is proposed for Schottky barrier metal-oxide-semiconductor field effect transistors (MOSFETs) on bulk substrates. The source/drain regions are designed to be composed with dual stacked silicide layers, forming different barrier heights to silicon channel. Performance comparisons between the dual barrier structure and the single barrier structure are carried out with numerical simulations. It is found that the dual barrier structure has significant advantages over the single barrier structure because the drive current and leakage current of the dual barrier structure can be modulated. Furthermore, the dual barrier structure's performance is nearly insensitive to the total silicide thickness, which can relax the fabrication requirements and even make an SOI substrate unnecessary for planar device design. The formation of ErSi$_{x}$/CoSi$_{2}$ stacked multilayers has been proved by experiments.
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Received: 12 November 2019
Published: 22 February 2020
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| PACS: |
85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.35.-p
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(Nanoelectronic devices)
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85.40.-e
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(Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)
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| Fund: Supported by the National Natural Science Foundation of China (No. 61474005), and the Beijing Natural Science Foundation (No. 4182025). |
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