| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Observation of Shubnikov-de Haas Oscillations in Large-Scale Weyl Semimetal WTe$_{2}$ Films |
| Yequan Chen, Yongda Chen, Jiai Ning, Liming Chen, Wenzhuo Zhuang, Liang He, Rong Zhang, Yongbing Xu**, Xuefeng Wang** |
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093
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| Cite this article: |
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Yequan Chen, Yongda Chen, Jiai Ning et al 2020 Chin. Phys. Lett. 37 017104 |
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Abstract Topological Weyl semimetal WTe$_{2}$ with large-scale film form has a promising prospect for new-generation spintronic devices. However, it remains a hard task to suppress the defect states in large-scale WTe$_{2}$ films due to the chemical nature. Here we significantly improve the crystalline quality and remove the Te vacancies in WTe$_{2}$ films by post annealing. We observe the distinct Shubnikov-de Haas quantum oscillations in WTe$_{2}$ films. The nontrivial Berry phase can be revealed by Landau fan diagram analysis. The Hall mobility of WTe$_{2}$ films can reach 1245 cm$^{2}$V$^{-1}$s$^{-1}$ and 1423 cm$^{2}$V$^{-1}$s$^{-1}$ for holes and electrons with the carrier density of $5\times 10^{19}$ cm$^{-3}$ and $2\times 10^{19}$ cm$^{-3}$, respectively. Our work provides a feasible route to obtain high-quality Weyl semimetal films for the future topological quantum device applications.
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Received: 20 December 2019
Published: 26 December 2019
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| PACS: |
71.18.+y
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(Fermi surface: calculations and measurements; effective mass, g factor)
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71.20.Be
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(Transition metals and alloys)
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73.50.Jt
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(Galvanomagnetic and other magnetotransport effects)
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81.10.-h
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(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
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| Fund: Supported by the National Key R&D Program of China (Grant Nos. 2017YFA0206304 and 2016YFA0300803), the National Natural Science Foundation of China (Grant Nos 61822403, 11874203, 11774160, 61427812 and U1732159), the Fundamental Research Funds for the Central Universities (Grant Nos 021014380080 and 021014380113), the Natural Science Foundation of Jiangsu Province of China (Grant No BK20192006), and Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics. |
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