Chin. Phys. Lett.  2019, Vol. 36 Issue (10): 107701    DOI: 10.1088/0256-307X/36/10/107701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Roles of Nano-Domain Switching and Non-180$^{\circ}$ Domains in Enhancing Local Piezoelectric Responses of Highly (100)-Oriented Pb(Zr$_{0.60}$Ti$_{0.40}$)O$_{3}$ Thin Films
Chen-Fei Jin1, Si-Qi Zhang1**, Zhi-Qiang Shen1, Wei-Li Li2
1School of Physics, Harbin Institute of Technology, Harbin 150001
2School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001
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Chen-Fei Jin, Si-Qi Zhang, Zhi-Qiang Shen et al  2019 Chin. Phys. Lett. 36 107701
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Abstract Ferroelectric Pb(Zr$_{0.60}$Ti$_{0.40}$)O$_{3}$ thin films deposited on the niobium-doped SrTiO$_{3}$ and Pt (111)/Ti/SiO$_{2}$/Si substrates are fabricated by a sol-gel method. X-ray diffraction indicates that the films have a 'cube-on-cube' growth with highly (100) preferred orientation and good surface qualities. Using piezoelectric force microscopy, we investigate domain structures and butterfly amplitude loops of ferroelectric thin films. The results indicate that the film deposited on Nb:SrTiO$_{3}$ has both kinds of 180$^{\circ}$ polarizations perpendicular or parallel to the surface while the film deposited on Pt/Ti/SiO$_{2}$/Si has irregular phase differences. Excellent piezoelectric polarization are observed in the films on niobium-doped SrTiO$_{3}$ with local $d_{33}^{\ast}$ values around 45 pm/V three times more than that of the films around 13 pm/V deposited on Pt (111)/Ti/SiO$_{2}$/Si. Our findings emphasize that nano-domain switching ability and non-180$^{\circ}$ domains will contribute significantly to enhance piezoelectric responses of ferroelectric thin films.
Received: 05 July 2019      Published: 21 September 2019
PACS:  77.55.fg (Pb(Zr,Ti)O3-based films)  
  77.65.-j (Piezoelectricity and electromechanical effects)  
  77.55.-g (Dielectric thin films)  
Fund: Supported by the National Natural Science Foundation of China under Grant No 11504071, and the Key Laboratory of Micro-optics and Photonic Technology of Heilongjiang Province for PFM Measurement during the Research.
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https://cpl.iphy.ac.cn/10.1088/0256-307X/36/10/107701       OR      https://cpl.iphy.ac.cn/Y2019/V36/I10/107701
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Chen-Fei Jin
Si-Qi Zhang
Zhi-Qiang Shen
Wei-Li Li
[1]Fong D D et al 2004 Science 304 1650
[2]Oh S H and Jang H M 1998 Appl. Phys. Lett. 72 1457
[3]Lee K, Lee K S, Kim Y K et al 2002 Integr. Ferroelectr. 46 307
[4]Chen Z, Zou X, Ren W et al 2012 Phys. Rev. B 86 235125
[5]Zhu Z X, Li J F, Liu Y Y et al 2009 Acta Mater. 57 4288
[6]Liu Y Y, Zhu Z X, Li J F et al 2010 Mech. Mater. 42 816
[7]Theissmann R, Schmitt L A, Kling J et al 2007 J. Appl. Phys. 102 024111
[8]Li J J, Yu J, Li J et al 2009 Chin. Phys. Lett. 26 047702
[9]Miriyala K and Ramadurai R 2016 Mater. Lett. 178 23
[10]Liu L M, Zeng H R, Chao Z Z et al 2011 Chin. Phys. Lett. 28 087701
[11]Xu S Q, Zhang Y, Guo H Z et al 2017 Chin. Phys. Lett. 34 027701
[12]Sun K X, Zhang S Y, Kiyotaka W et al 2016 Chin. Phys. Lett. 33 064301
[13]Liu C Q, Fei W D and Li W L 2008 Thin Solid Films 516 1265
[14]Alkoy E M, Alkoy S and Shiosaki T 2007 Ceram. Int. 33 1455
[15]Ohno T, Fukumitsu K, Honda T et al 2016 Mater. Lett. 181 74
[16]Kholkin A L, Gruverman A, Wu A et al 2001 Mater. Lett. 50 219
[17]Dunn S and Whatmore R W 2002 J. Eur. Ceram. Soc. 22 825
[18]Zhang S Q, Li W L, Jin C F et al 2015 Mater. Lett. 160 347
[19]Zhang S Q, Zheng F, Jin C F et al 2015 J. Phys. Chem. C 119 17487
[20]Spierings G A C M, Dormans G J M, Moors W G J et al 1995 J. Appl. Phys. 78 1926
[21]Kuwabara H, Menou N and Funakubo H 2007 Appl. Phys. Lett. 90 222901
[22]Zhang S Q, Fei W D, Li W L et al 2009 J. Alloys Compd. 487 703
[23]Pandey D, Singh A K and Baik S 2008 Acta Crystallogr. Sect. A: Found. Crystallogr. 64 192
[24]Brennecka G L, Huebner W, Tuttle B A et al 2004 J. Am. Ceram. Soc. 87 1459
[25]Zhang S Q, Wang L D, Li W L et al 2011 Mater. Res. Bull. 4 6 1237
[26]Fei W D, Liu C Q, Ding M H et al 2009 Rev. Sci. Instrum. 80 093903
[27]Chen S Y and Chen I W 2005 J. Am. Ceram. Soc. 81 97
[28]Zeng H R, Li G R, Yin Q R and Tang X G 2003 Acta Phys. Sin. 52 1783 (in Chinese)
[29]Chen Y, Wong C M, Deng H et al 2015 AIP Adv. 5 037117
[30]Tong Y, Liu M, Chen H M, Li G P et al 2015 J. Appl. Phys. 117 074102
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