| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effect of Green Quantum Well Number on Properties of Green GaN-Based Light-Emitting Diodes |
| Zhi-Hui Wang, Xiao-Lan Wang**, Jun-Lin Liu, Jian-Li Zhang, Chun-Lan Mo, Chang-Da Zheng, Xiao-Ming Wu, Guang-Xu Wang, Feng-Yi Jiang |
National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330096
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| Cite this article: |
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Zhi-Hui Wang, Xiao-Lan Wang, Jun-Lin Liu et al 2018 Chin. Phys. Lett. 35 087302 |
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Abstract InGaN-based green light-emitting diodes (LEDs) with different green quantum well numbers grown on Si (111) substrates by metal organic chemical vapor deposition are investigated. It is observed that V-shaped pits appear in the AFM images with the green quantum well number increasing from 5 to 9, and results in larger reverse-bias leakage current. Meanwhile, in the case of the sample with the number from 5 to 7 then to 9, the external quantum efficiency increases firstly, and then decreases. These phenomena may be related to the size of V-shaped pits in the active area and the distribution of electrons and holes in the active area caused by V-shaped pits. The optimal number of green quantum wells is determined to be 7.
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Received: 02 May 2018
Published: 15 July 2018
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| PACS: |
73.61.Ey
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(III-V semiconductors)
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73.21.Fg
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(Quantum wells)
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61.72.Ff
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(Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.))
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78.60.Fi
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(Electroluminescence)
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| Fund: Supported by the National Key Research and Development Program of China under Grant No 2016YFB0400601, and the National Natural Science Foundation of China under Grant Nos 61704069, 11674147, 61604066, 51602141 and 11604137. |
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