Chin. Phys. Lett.  2018, Vol. 35 Issue (7): 077302    DOI: 10.1088/0256-307X/35/7/077302
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor with LaTaON Gate Dielectric by Optimizing Ta Content
Bin-Xu, Jing-Ping Xu, Lu Liu**, Yong Su
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074
Cite this article:   
Bin-Xu, Jing-Ping Xu, Lu Liu et al  2018 Chin. Phys. Lett. 35 077302
Download: PDF(1714KB)   PDF(mobile)(1708KB)   HTML
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract The interfacial and electrical properties of high-$k$ LaTaON gate dielectric Ge metal-oxide-semiconductor (MOS) capacitors with different tantalum (Ta) contents are investigated. Experimental results show that the Ge MOS capacitors with a Ta content of $\sim$30% exhibit the best interfacial and electrical properties, including low interface-state density $(7.6\times10^{11}$ cm$^{-2}$ eV$^{-1}$), small gate-leakage current $(8.32\times10^{-5}$ A/cm$^{2}$) and large equivalent permittivity (22.46). The x-ray photoelectron spectroscopy results confirm that the least GeO$_{x}$ is formed at the Ge surface for the sample with a Ta content of $\sim$30% due to the effective blocking role of Ta against O diffusion and the greatly improved hygroscopicity of LaON.
Received: 29 January 2018      Published: 24 June 2018
PACS:  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  73.20.At (Surface states, band structure, electron density of states)  
  71.20.Eh (Rare earth metals and alloys)  
Fund: Supported by the National Natural Science Foundation of China under Grant No 61274112.
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/10.1088/0256-307X/35/7/077302       OR      https://cpl.iphy.ac.cn/Y2018/V35/I7/077302
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
Bin-Xu
Jing-Ping Xu
Lu Liu
Yong Su
[1]Kamata Y 2008 Mater. Today 11 30
[2]Caymax M, Houssa M, Pourtois G, Bellenger F, Martens K, Delabie A and van Elshocht S 2008 Appl. Surf. Sci. 254 6094
[3]Abermann S, Henkel C, Bethge O, Pozzovivo G, Klang P and Bertagnolli E 2010 Appl. Surf. Sci. 256 5031
[4]Xu H X, Xu J P, Li C X and Lai P T 2010 Appl. Phys. Lett. 97 022903
[5]Mavrou G, Tsipas P, Sotiropoulos A, Galata S, Panayiotatos Y, Dimoulas A, Marchiori C and Fompeyrine J 2008 Appl. Phys. Lett. 93 212904
[6]Molle A, Baldovino S, Fanciulli M, Tsoutsou D, Golias E and Dimoulas A 2011 J. Appl. Phys. 110 084504
[7]Lin M H, Lan C K, Chen C C and Wu J Y 2011 Appl. Phys. Lett. 99 182105
[8]Liu L N, Choi H W, Xu J P and Lai P T 2015 Appl. Phys. Lett. 107 213501
[9]Ji F, Xu J P, Huang Y, Liu L and Lai P T 2014 IEEE Trans. Electron Devices 61 3608
[10]Cheng Z X, Xu J P, Liu L, Huang Y, Lai P T and Tang W M 2016 Appl. Phys. Lett. 109 023514
[11]Cheng Z X 2017 PhD Dissertation (Wuhan: Huazhong University of Science and Technology) (in Chinese)
[12]Huang X D, Sin J K O and Lai P T 2012 IEEE Trans. Device Mater. Reliab. 12 306
[13]Hagiwara H, Nagatomo M, Seto C, Ida S and Ishiahara T 2013 Catalysts 3 614
[14]Crist B V 1999 Handbook of Monochromatic XPS Spectra: The Elements of Native Oxides (Chichester: Wiley)
[15]Gao Q, Wang S, Ma Y, Tang Y, Giordano C and Antonietti M 2012 Angew. Chem. Int. Ed. 51 961
[16]Sekhar M C, Uthanna S, Martins R, Chandra S J and Elangovan E 2012 IOP Conf. Ser.: Mater. Sci. Eng. 34 012009
[17]Chun W J, Ishikawa A, Fujisawa H, Takata T, Kondo J N, Hara M, Kawai M, Matsumoto Y and Domen K 2003 J. Phys. Chem. B 107 1798
[18]Molle A, Bhuiyan M N K, Tallarida G and Fanciulli M 2006 Appl. Phys. Lett. 89 083504
[19]Ko T S, Shieh J, Yang M C, Lu T C, Kuo H C and Wang S C 2008 Thin Solid Films 516 2934
[20]Perego M, Scarel G, Fanciulli M, Fedushkin I L and Skatova A A 2007 Appl. Phys. Lett. 90 162115
[21]Xie Q, Deng S, Schaekers M, Lin D, Caymax M, Delabie A, Qu X P, Jiang Y L, Deduytsche D and Detavernier C 2012 Semicond. Sci. Technol. 27 074012
[22]Dimoulas A, Tsoutsou D, Panayiotatos Y, Sotiropoulos A, Mavrou G, Galata S F and Golias E 2010 Appl. Phys. Lett. 96 012902
[23]Xu J P, Lai P T, Li C X, Zou X and Chan C L 2006 IEEE Electron Device Lett. 27 439
[24]Terman L M 1962 Solid-State Electron. 5 285
[25]Zhang L, Li H, Guo Y, Tang K, Woicik J, Robertson J and McIntyre P C 2015 ACS Appl. Mater. Interfaces 7 20499
Related articles from Frontiers Journals
[1] Hao Liu , Wen-Jun Liu, Yi-Fan Xiao , Chao-Chao Liu , Xiao-Han Wu , and Shi-Jin Ding . Band Alignment at the Al$_{2}$O$_{3}/\beta$-Ga$_{2}$O$_{3}$ Interface with CHF$_{3}$ Treatment[J]. Chin. Phys. Lett., 2020, 37(7): 077302
[2] Wen-Lun Zhang. Improvement of Performance of HfS$_{2}$ Transistors Using a Self-Assembled Monolayer as Gate Dielectric[J]. Chin. Phys. Lett., 2019, 36(6): 077302
[3] Yuan Liu, Li Wang, Shu-Ting Cai, Ya-Yi Chen, Rongsheng Chen, Xiao-Ming Xiong, Kui-Wei Geng. Temperature Dependence of Electrical Characteristics in Indium-Zinc-Oxide Thin Film Transistors from 10K to 400K[J]. Chin. Phys. Lett., 2018, 35(9): 077302
[4] Zhao-Zhao Hou, Gui-Lei Wang, Jia-Xin Yao, Qing-Zhu Zhang, Hua-Xiang Yin. Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel[J]. Chin. Phys. Lett., 2018, 35(5): 077302
[5] Qi-Wen Zheng, Jiang-Wei Cui, Ying Wei, Xue-Feng Yu, Wu Lu, Diyuan Ren, Qi Guo. Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65nm NMOSFETs[J]. Chin. Phys. Lett., 2018, 35(4): 077302
[6] Ya-Yi Chen, Yuan Liu, Zhao-Hui Wu, Li Wang, Bin Li, Yun-Fei En, Yi-Qiang Chen. Low-Frequency Noise in Amorphous Indium Zinc Oxide Thin Film Transistors with Aluminum Oxide Gate Insulator[J]. Chin. Phys. Lett., 2018, 35(4): 077302
[7] Can Li, Cong-Wei Liao, Tian-Bao Yu, Jian-Yuan Ke, Sheng-Xiang Huang, Lian-Wen Deng. Concise Modeling of Amorphous Dual-Gate In-Ga-Zn-O Thin-Film Transistors for Integrated Circuit Designs[J]. Chin. Phys. Lett., 2018, 35(2): 077302
[8] Zhao-Zhao Hou, Gui-Lei Wang, Jin-Juan Xiang, Jia-Xin Yao, Zhen-Hua Wu, Qing-Zhu Zhang, Hua-Xiang Yin. Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-$\kappa$ Dielectrics and SiGe Epitaxial Substrates[J]. Chin. Phys. Lett., 2017, 34(9): 077302
[9] Sheng-Kai Wang, Lei Ma, Hu-Dong Chang, Bing Sun, Yu-Yu Su, Le Zhong, Hai-Ou Li, Zhi Jin, Xin-Yu Liu, Hong-Gang Liu. Positive Bias Temperature Instability Degradation of Buried InGaAs Channel nMOSFETs with InGaP Barrier Layer and Al$_{2}$O$_{3}$ Dielectric[J]. Chin. Phys. Lett., 2017, 34(5): 077302
[10] Han-Han Lu, Jing-Ping Xu, Lu Liu. Interfacial and Electrical Properties of GaAs Metal-Oxide-Semiconductor Capacitor with ZrAlON as the Interfacial Passivation Layer[J]. Chin. Phys. Lett., 2017, 34(4): 077302
[11] Yuan Liu, Kai Liu, Rong-Sheng Chen, Yu-Rong Liu, Yun-Fei En, Bin Li, Wen-Xiao Fang. Total Ionizing Dose Radiation Effects in the P-Type Polycrystalline Silicon Thin Film Transistors[J]. Chin. Phys. Lett., 2017, 34(1): 077302
[12] Yi-Tao He, Ming Qiao, Lu Li, Gang Dai, Bo Zhang, Zhao-Ji Li. A Lateral Regulator Diode with Field Plates for Light-Emitting-Diode Lighting[J]. Chin. Phys. Lett., 2016, 33(09): 077302
[13] Qi-Wen Zheng, Jiang-Wei Cui, Hang Zhou, De-Zhao Yu, Xue-Feng Yu, Qi Guo. Hot-Carrier Effects on Total Dose Irradiated 65nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors[J]. Chin. Phys. Lett., 2016, 33(07): 077302
[14] Lan-Feng Tang, Hai Lu, Fang-Fang Ren, Dong Zhou, Rong Zhang, You-Dou Zheng, Xiao-Ming Huang,. Electrical Instability of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Ultraviolet Illumination[J]. Chin. Phys. Lett., 2016, 33(03): 077302
[15] SHEN Hua-Jun, TANG Ya-Chao, PENG Zhao-Yang, DENG Xiao-Chuan, BAI Yun, WANG Yi-Yu, LI Cheng-Zhan, LIU Ke-An, LIU Xin-Yu. Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors[J]. Chin. Phys. Lett., 2015, 32(12): 077302
Viewed
Full text


Abstract