Chin. Phys. Lett.  2018, Vol. 35 Issue (6): 068101    DOI: 10.1088/0256-307X/35/6/068101
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Fabrication and Characteristics of Nano-Floating Gate Memories with ZnO Nano-Crystals as Charge-Storage Layer
Lu Liu, Yong Su**, Jing-Ping Xu, Yi-Xian Zhang
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074
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Lu Liu, Yong Su, Jing-Ping Xu et al  2018 Chin. Phys. Lett. 35 068101
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Abstract Nano-floating gate memory devices with ZnO nano-crystals as charge storage layers are fabricated, and the influence of post-deposition annealing temperature and thickness of the ZnO layer are investigated. Atomic force microscopy and scanning electron microscopy reveal the morphology of discrete ZnO nano-crystals. For capacitance-voltage measurements, it is found that the memory device with 1.5 nm ZnO and annealed at 700$^{\circ}\!$C shows a larger memory window of 4.3 V (at $\pm$6 V) and better retention characteristics than memory devices with 2.5 nm ZnO or annealed at other temperatures. These results indicate that the nano-floating gate memory with ZnO nano-crystals can obtain good trade-off memory properties.
Received: 30 January 2018      Published: 19 May 2018
PACS:  81.07.Bc (Nanocrystalline materials)  
  81.15.Cd (Deposition by sputtering)  
  81.16.Dn (Self-assembly)  
  81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)  
Fund: Supported by the National Natural Science Foundation of China under Grant No 61404055.
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https://cpl.iphy.ac.cn/10.1088/0256-307X/35/6/068101       OR      https://cpl.iphy.ac.cn/Y2018/V35/I6/068101
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Lu Liu
Yong Su
Jing-Ping Xu
Yi-Xian Zhang
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