| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Photoluminescence Analysis of Electron Damage for Minority Carrier Diffusion Length in GaInP/GaAs/Ge Triple-Junction Solar Cells |
| Rui Wu, Jun-Ling Wang, Gang Yan, Rong Wang** |
Key Laboratory of Beam Technology and Materials Modification (Ministry of Education), College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875
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| Cite this article: |
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Rui Wu, Jun-Ling Wang, Gang Yan et al 2018 Chin. Phys. Lett. 35 046101 |
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Abstract Photoluminescence (PL) measurements are carried out to investigate the degradation of GaInP top cell and GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells irradiated with 1.0, 1.8 and 11.5 MeV electrons with fluences ranging up to $3\times10^{15}$, $1\times10^{15}$ and $3\times10^{14}$ cm$^{-2}$, respectively. The degradation rates of PL intensity increase with the electron fluence and energy. Furthermore, the damage coefficient of minority carrier diffusion length is estimated by the PL radiative efficiency. The damage coefficient increases with the electron energy. The relation of damage coefficient to electron energy is discussed with the non-ionizing energy loss (NIEL), which shows a quadratic dependence between damage coefficient and NIEL.
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Received: 05 January 2018
Published: 13 March 2018
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| Fund: Supported by the National Natural Science Foundation of China under Grant Nos 11675020, 11375028, 11075018 and 10675023. |
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