Chin. Phys. Lett.  2018, Vol. 35 Issue (4): 044202    DOI: 10.1088/0256-307X/35/4/044202
FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
Electrically and Optically Bistable Operation in an Integration of a 1310nm DFB Laser and a Tunneling Diode
Ya-Jie Li1,2, Jia-Qi Wang1, Lu Guo1,2, Guang-Can Chen1,2, Zhao-Song Li1,2, Hong-Yan Yu1, Xu-Liang Zhou1, Huo-Lei Wang3, Wei-Xi Chen4, Jiao-Qing Pan1,2**
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049
3Department of Applied Physics and Materials Science, California Institute of Technology, California 91125, USA
4State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871
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Ya-Jie Li, Jia-Qi Wang, Lu Guo et al  2018 Chin. Phys. Lett. 35 044202
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Abstract We experimentally demonstrate an InP-based hybrid integration of a single-mode DFB laser emitting at around 1310 nm and a tunneling diode. The evident negative differential resistance regions are obtained in both electrical and optical output characteristics. The electrical and optical bistabilities controlled by the voltage through the tunneling diode are also measured. When the voltage changes between 1.46 V and 1.66 V, a 200-mV-wide hysteresis loop and an optical power ON/OFF ratio of 17 dB are obtained. A side-mode suppression ratio of the integrated device in the ON state is up to 43 dB. The tunneling diode can switch on/off the laser within a very small voltage range compared with that directly controlled by a voltage source.
Received: 24 November 2017      Published: 13 March 2018
PACS:  42.55.Px (Semiconductor lasers; laser diodes)  
  85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices))  
  85.60.Bt (Optoelectronic device characterization, design, and modeling)  
  42.65.Pc (Optical bistability, multistability, and switching, including local field effects)  
Fund: Supported by the National Key Research and Development Program of China under Grant No 2017YFB0405301, and the National Natural Science Foundation of China under Grant Nos 61604144 and 61504137.
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https://cpl.iphy.ac.cn/10.1088/0256-307X/35/4/044202       OR      https://cpl.iphy.ac.cn/Y2018/V35/I4/044202
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Ya-Jie Li
Jia-Qi Wang
Lu Guo
Guang-Can Chen
Zhao-Song Li
Hong-Yan Yu
Xu-Liang Zhou
Huo-Lei Wang
Wei-Xi Chen
Jiao-Qing Pan
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