| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Gap States of ZnO Thin Films by New Methods: Optical Spectroscopy, Optical Conductivity and Optical Dispersion Energy |
| Vali Dalouji1**, Shahram Solaymani2, Laya Dejam3, Seyed Mohammad Elahi2, Sahar Rezaee4, Dariush Mehrparvar1 |
1Department of Physics, Faculty of Science, Malayer University, Malayer, Iran
2Department of Physics, Science and Research Branch, Islamic Azad University, Tehran, Iran
3Department of Physics, West Tehran Branch, Islamic Azad University, Tehran, Iran
4Department of Physics, Kermanshah Branch, Islamic Azad University, Kermanshah, Iran
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Vali Dalouji, Shahram Solaymani, Laya Dejam et al 2018 Chin. Phys. Lett. 35 027701 |
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Abstract The optical reflectance and transmittance spectra in the wavelength range of 300–2500 nm are used to compute the absorption coefficient of zinc oxide films annealed at different post-annealing temperatures 400, 500 and 600$^\circ\!$C. The values of the cross point between the curves of the real and imaginary parts of the optical conductivity $\sigma_{1}$ and $\sigma_{1}$ with energy axis of films exhibit values that correspond to optical gaps and are about 3.25–3.3 eV. The maxima of peaks in plots $dR/d\lambda$ and $dT/d\lambda$ versus wavelength of films exhibit optical gaps at about 3.12–3.25 eV. The values of the fundamental indirect band gap obtained from the Tauc model are at about 3.14–3.2 eV. It can be seen that films annealed at 600$^{\circ}\!$C have the minimum indirect optical band gap at about 3.15 eV. The films annealed at 600$^{\circ}\!$C have Urbach's energy minimum of 1.38 eV and hence have minimum disorder. The dispersion energy $E_{\rm d}$ of films annealed at 500$^{\circ}\!$C has the minimum value of 43 eV.
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Received: 18 September 2017
Published: 23 January 2018
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