| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Concise Modeling of Amorphous Dual-Gate In-Ga-Zn-O Thin-Film Transistors for Integrated Circuit Designs |
| Can Li, Cong-Wei Liao**, Tian-Bao Yu, Jian-Yuan Ke, Sheng-Xiang Huang, Lian-Wen Deng |
School of Physics and Electronics, Central South University, Changsha 410083
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| Cite this article: |
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Can Li, Cong-Wei Liao, Tian-Bao Yu et al 2018 Chin. Phys. Lett. 35 027302 |
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Abstract An analytical model for current–voltage behavior of amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) with dual-gate structures is developed. The unified expressions for synchronous and asynchronous operating modes are derived on the basis of channel charges, which are controlled by gate voltage. It is proven that the threshold voltage of asynchronous dual-gate IGZO TFTs is adjusted in proportion to the ratio of top insulating capacitance to the bottom insulating capacitance $(C_{\rm TI}/C_{\rm BI})$. Incorporating the proposed model with Verilog-A, a touch-sensing circuit using dual-gate structure is investigated by SPICE simulations. Comparison shows that the touch sensitivity is increased by the dual-gate IGZO TFT structure.
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Received: 29 August 2017
Published: 23 January 2018
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| PACS: |
73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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71.23.An
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(Theories and models; localized states)
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85.60.Pg
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(Display systems)
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| Fund: Supported by the National Key Research and Development Program of China under Grant No 2017YFA0204600, the National Natural Science Foundation of China under Grant No 61404002, and the Science and Technology Project of Hunan Province under Grant No 2015JC3041. |
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