Chin. Phys. Lett.  2017, Vol. 34 Issue (9): 098101    DOI: 10.1088/0256-307X/34/9/098101
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Nonresonant and Resonant Nonlinear Absorption of CdSe-Based Nanoplatelets
Li-Bo Fang, Wei Pan**, Si-Hua Zhong, Wen-Zhong Shen**
Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, and Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240
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Abstract We present a comprehensive understanding of the nonlinear absorption characteristics of CdSe-based nanoplatelets (NPLs) synthesized by the solution-phase method and the colloidal atomic layer deposition approach through $Z$-scan techniques at 532 nm with picosecond pulses. The CdSe NPLs exhibit strong two-photon induced free carrier absorption (effective three-photon absorption) upon the nonresonant excitation, resulting in a remarkable optical limiting behavior with the limiting threshold of approximately 75 GW/cm$^{2}$. A nonlinear optical switching from saturable absorption (SA) to reverse saturable absorption (RSA) with increasing the laser intensity is observed when coating CdSe NPLs with a monolayer of CdS shell to realize the resonant absorption. The SA behavior originates from the ground state bleaching and the RSA behavior is attributed to the free carrier absorption. These findings explicitly demonstrate the potential applications of CdSe-based NPLs in nonlinear optoelectronics such as optical limiting devices, optical pulse compressors and optical switching devices.
Received: 27 April 2017      Published: 15 August 2017
PACS:  81.05.Dz (II-VI semiconductors)  
  81.07.-b (Nanoscale materials and structures: fabrication and characterization)  
  42.65.-k (Nonlinear optics)  
  42.70.Nq (Other nonlinear optical materials; photorefractive and semiconductor materials)  
  78.67.-n (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)  
Fund: Supported by the National Natural Science Foundation of China under Grant Nos 61234005 and 11304197.
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Li-Bo Fang, Wei Pan, Si-Hua Zhong et al  2017 Chin. Phys. Lett. 34 098101
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http://cpl.iphy.ac.cn/10.1088/0256-307X/34/9/098101       OR      http://cpl.iphy.ac.cn/Y2017/V34/I9/098101
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Li-Bo Fang
Wei Pan
Si-Hua Zhong
Wen-Zhong Shen
[1]Pan L Y et al 2007 Appl. Phys. Lett. 91 051902
[2]Scott R et al 2015 Nano Lett. 15 4985
[3]Zhao S L et al 2016 Opt. Laser Technol. 82 104
[4]Guzelturk B et al 2014 ACS Nano 8 6599
[5]She C X et al 2014 Nano Lett. 14 2772
[6]Qu S L et al 2002 Chem. Phys. Lett. 356 403
[7]Suchand Sandeep C S et al 2010 Chem. Phys. Lett. 485 326
[8]Huang T et al 2008 Chem. Phys. Lett. 451 213
[9]Salah A et al 2015 Appl. Surf. Sci. 353 112
[10]Wang F et al 2010 Analyst 135 1839
[11]Gerdova I and Haché A 2005 Opt. Commun. 246 205
[12]Achtstein A W et al 2013 J. Phys. Chem. C 117 25756
[13]Xing G C et al 2010 Appl. Phys. Lett. 97 061112
[14]Ithurria S and Dubertret B 2008 J. Am. Chem. Soc. 130 16504
[15]Feng X B and Ji W 2009 Opt. Express 17 13140
[16]Zeng Y et al 2013 Appl. Phys. Lett. 102 043308
[17]Ithurria S and Talapin D V 2012 J. Am. Chem. Soc. 134 18585
[18]Achtstein A W et al 2015 J. Phys. Chem. C 119 20156
[19]Yeltik A et al 2015 J. Phys. Chem. C 119 26768
[20]Sheik-Bahae M et al 1990 IEEE J. Quantum Electron. 26 760
[21]Chen X B et al 2003 Nano Lett. 3 799
[22]Cherevkov S A et al 2013 Phys. Rev. B 88 041303
[23]Ma Y Z et al 2012 Appl. Opt. 51 5432
[24]He J et al 2005 Opt. Express 13 9235
[25]Rao S V et al 2011 Chem. Phys. Lett. 514 98
[26]Sutherland R L et al 2005 J. Opt. Soc. Am. B 22 1939
[27]Gu. B et al 2008 Appl. Phys. Lett. 92 091118
[28]Sippel P et al 2015 Nano Lett. 15 2409
[29]Liu Z B et al 2008 Adv. Mater. 20 511
[30]Eshet H et al 2013 Nano Lett. 13 5880
[31]Sreeramulu V et al 2014 J. Phys. Chem. C 118 30333
[32]Chen J L T et al 2014 New J. Chem. 38 985
[33]Lee Y H et al 2009 Appl. Phys. Lett. 95 023105
[34]Gao Y C et al 2005 Opt. Commun. 251 429
[35]Wang J et al 2010 Opt. Commun. 283 3525
[36]Ma Y J et al 2011 Opt. Lett. 36 3431
[37]Band Y B et al 1986 Chem. Phys. Lett. 126 280
[38]Roy S and Yadav C 2013 Appl. Phys. Lett. 103 241113
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