Chin. Phys. Lett.  2017, Vol. 34 Issue (9): 097801    DOI: 10.1088/0256-307X/34/9/097801
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Effect of Droop Phenomenon in InGaN/GaN Blue Laser Diodes on Threshold Current
Xiao-Wang Fan1,2,3, Jian-Ping Liu2,3**, Feng Zhang2,3, Masao Ikeda2,3, De-Yao Li2,3, Shu-Ming Zhang2,3, Li-Qun Zhang2,3, Ai-Qin Tian2,3, Peng-Yan Wen2,3, Guo-Hong Ma1, Hui Yang2,3
1Department of Physics, Shanghai University, Shanghai 200444
2Suzhou Institute of Nano-tech and Nano-bionics, University of Chinese Academy of Sciences, Suzhou 215123
3Key Laboratory of Nanodevice and Applications, Chinese Academy of Sciences, Suzhou 215123
Cite this article:   
Xiao-Wang Fan, Jian-Ping Liu, Feng Zhang et al  2017 Chin. Phys. Lett. 34 097801
Download: PDF(468KB)   PDF(mobile)(464KB)   HTML
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract Electroluminescence (EL) and temperature-dependent photoluminescence measurements are performed to study the internal quantum efficiency droop phenomenon of blue laser diodes (LDs) before lasing. Based on the ABC mode, the EL result demonstrates that non-radiative recombination rates of LDs with threshold current densities of 4 and 6 kA/cm$^{2}$ are similar, while LD with threshold current density of 4 kA/cm$^{2}$ exhibits a smaller auger-like recombination rate compared with the one of 6 kA/cm$^{2}$. The internal quantum efficiency droop is more serious for LD with higher threshold current density. The internal quantum efficiency value estimated from temperature-dependent photoluminescence is consistent with EL measurements.
Received: 24 April 2017      Published: 15 August 2017
PACS:  78.60.Fi (Electroluminescence)  
  78.55.-m (Photoluminescence, properties and materials)  
  42.55.Px (Semiconductor lasers; laser diodes)  
Fund: Supported by the National Key Research and Development Program of China under Grant Nos 2016YFB0401803 and 2016YFB0402002, the National Natural Science Foundation of China under Grant Nos 61574160 and 61334005, the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No XDA09020401, and the Visiting Professorship for Senior International Scientists of the Chinese Academy of Sciences under Grant No 2013T2J0048.
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/10.1088/0256-307X/34/9/097801       OR      https://cpl.iphy.ac.cn/Y2017/V34/I9/097801
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
Xiao-Wang Fan
Jian-Ping Liu
Feng Zhang
Masao Ikeda
De-Yao Li
Shu-Ming Zhang
Li-Qun Zhang
Ai-Qin Tian
Peng-Yan Wen
Guo-Hong Ma
Hui Yang
[1]Funato M, Kim Y S, Hira T et al 2013 Appl. Phys. Express 6 111002
[2]Tyagi A, Farrell R M, Kelchner K M et al 2010 Appl. Phys. Express 3 011002
[3]Karpov S 2015 Opt. Quantum Electron. 47 1293
[4]Kim M H, Schubert M F, Dai Q et al 2007 Appl. Phys. Lett. 91 183507
[5]Akyol F, Nath D N, Krishnamoorthy S et al 2012 Appl. Phys. Lett. 100 111118
[6]Verzellesi G, Saguatti D, Meneghini M et al 2013 J. Appl. Phys. 114 071101
[7]Kopyev V V, Prudaev I A and Romanov I S 2014 J. Phys.: Conf. Ser. 541 012055
[8]Yoshida H, Kuwabara M, Yamashita Y et al 2010 Appl. Phys. Lett. 96 211122
[9]Ryu H Y, Kim H S and Shim J I 2009 Appl. Phys. Lett. 95 081114
[10]David A and Grundmann M J 2010 Appl. Phys. Lett. 97 033501
[11]Shen Y C, Mueller G O, Watanabe S et al 2007 Appl. Phys. Lett. 91 141101
[12]Brendel M, Kruse A, Jönen H et al 2011 Appl. Phys. Lett. 99 031106
[13]Strauß U, Hager T, Brüderl G et al 2014 Proc. SPIE 8986 89861L
[14]Cho Y H, Gainer G H, Fischer A J et al 1998 Appl. Phys. Lett. 73 1370
[15]Schubert E F, Gessmann T and Kim J K 2005 Light Emitting Diodes (Cambridge: Cambridge University Press)
Related articles from Frontiers Journals
[1] Jingrui Ma, Haodong Tang, Xiangwei Qu, Guohong Xiang, Siqi Jia, Pai Liu, Kai Wang, and Xiao Wei Sun. A $dC/dV$ Measurement for Quantum-Dot Light-Emitting Diodes[J]. Chin. Phys. Lett., 2022, 39(12): 097801
[2] Lehua Gu, Shuang Wu, Shuai Zhang, and Shiwei Wu. Nanoscale Impact Ionization and Electroluminescence in a Biased Scanning-Tunneling-Microscope Junction[J]. Chin. Phys. Lett., 2022, 39(3): 097801
[3] Zhong-Qiu Xing, Yong-Jie Zhou, Yu-Huai Liu, Fang Wang. Reduction of Electron Leakage of AlGaN-Based Deep Ultraviolet Laser Diodes Using an Inverse-Trapezoidal Electron Blocking Layer[J]. Chin. Phys. Lett., 2020, 37(2): 097801
[4] Qi Wang, Jun-Chi Yu, Tao Tao, Bin Liu, Ting Zhi, Xu Cen, Zi-Li Xie, Xiang-Qian Xiu, Yu-Gang Zhou, You-Dou Zheng, Rong Zhang. Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate[J]. Chin. Phys. Lett., 2019, 36(8): 097801
[5] Yi-Fu Wang, Mussaab I. Niass, Fang Wang, Yu-Huai Liu. Reduction of Electron Leakage in a Deep Ultraviolet Nitride Laser Diode with a Double-Tapered Electron Blocking Layer[J]. Chin. Phys. Lett., 2019, 36(5): 097801
[6] Sheng Cao, Xiao-Ming Wu, Jun-Lin Liu, Feng-Yi Jiang. Carrier Dynamics Determined by Carrier-Phonon Coupling in InGaN/GaN Multiple Quantum Well Blue Light Emitting Diodes[J]. Chin. Phys. Lett., 2019, 36(2): 097801
[7] Qing-feng Wu, Sheng Cao, Chun-lan Mo, Jian-li Zhang, Xiao-lan Wang, Zhi-jue Quan, Chang-da Zheng, Xiao-ming Wu, Shuan Pan, Guang-xu Wang, Jie Ding, Long-quan Xu, Jun-lin Liu, Feng-yi Jiang. Effects of Hydrogen Treatment in Barrier on the Electroluminescence of Green InGaN/GaN Single-Quantum-Well Light-Emitting Diodes with V-Shaped Pits Grown on Si Substrates[J]. Chin. Phys. Lett., 2018, 35(9): 097801
[8] Zhi-Hui Wang, Xiao-Lan Wang, Jun-Lin Liu, Jian-Li Zhang, Chun-Lan Mo, Chang-Da Zheng, Xiao-Ming Wu, Guang-Xu Wang, Feng-Yi Jiang. Effect of Green Quantum Well Number on Properties of Green GaN-Based Light-Emitting Diodes[J]. Chin. Phys. Lett., 2018, 35(8): 097801
[9] Xi-xia Tao, Chun-lan Mo, Jun-lin Liu, Jian-li Zhang, Xiao-lan Wang, Xiao-ming Wu, Long-quan Xu, Jie Ding, Guang-xu Wang, Feng-yi Jiang. Electroluminescence from the InGaN/GaN Superlattices Interlayer of Yellow LEDs with Large V-Pits Grown on Si (111)[J]. Chin. Phys. Lett., 2018, 35(5): 097801
[10] Ai-Xing Li, Chun-Lan Mo, Jian-Li Zhang, Xiao-Lan Wang, Xiao-Ming Wu, Guang-Xu Wang, Jun-Lin Liu, Feng-Yi Jiang. Effect of Mg-Preflow for p-AlGaN Electron Blocking Layer on the Electroluminescence of Green LEDs with V-Shaped Pits[J]. Chin. Phys. Lett., 2018, 35(2): 097801
[11] Ning-Ning Chen, Wan-Yi Tan, Dong-Yu Gao, Jian-Hua Zou, Jun-Zhe Liu, Jun-Biao Peng, Yong Cao, Xu-Hui Zhu. BiPh-$m$-BiDPO as a Hole-Blocking Layer for Organic Light-Emitting Diodes: Revealing Molecular Structure-Properties Relationship[J]. Chin. Phys. Lett., 2017, 34(7): 097801
[12] Wei-Jing Qi, Long-Quan Xu, Chun-Lan Mo, Xiao-Lan Wang, Jie Ding, Guang-Xu Wang, Shuan Pan, Jian-Li Zhang, Xiao-Ming Wu, Jun-Lin Liu, Feng-Yi Jiang. The Efficiency Droop of InGaN-Based Green LEDs with Different Superlattice Growth Temperatures on Si Substrates via Temperature-Dependent Electroluminescence[J]. Chin. Phys. Lett., 2017, 34(7): 097801
[13] Lai Wang, Xiao Meng, Jung-Hoon Song, Tae-Soo Kim, Seung-Young Lim, Zhi-Biao Hao, Yi Luo, Chang-Zheng Sun, Yan-Jun Han, Bing Xiong, Jian Wang, Hong-Tao Li. A Method to Obtain Auger Recombination Coefficient in an InGaN-Based Blue Light-Emitting Diode[J]. Chin. Phys. Lett., 2017, 34(1): 097801
[14] Ning Zhang, Xue-Cheng Wei, Kun-Yi Lu, Liang-Sen Feng, Jie Yang, Bin Xue, Zhe Liu, Jin-Min Li, Jun-Xi Wang. Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes[J]. Chin. Phys. Lett., 2016, 33(11): 097801
[15] Xiao-Peng Lv, Hui Wang, Ling-Qiang Meng, Xiao-Fang Wei, Yong-Zhen Chen, Xiang-Bin Kong, Jian-Jun Liu, Jian-Xin Tang, Peng-Fei Wang, Ying Wang. High Efficiency and Stable Organic Light-Emitting Diodes Based on Thermally Activated Delayed Fluorescence Emitter[J]. Chin. Phys. Lett., 2016, 33(08): 097801
Viewed
Full text


Abstract