Chin. Phys. Lett.  2017, Vol. 34 Issue (9): 097801    DOI: 10.1088/0256-307X/34/9/097801
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Effect of Droop Phenomenon in InGaN/GaN Blue Laser Diodes on Threshold Current
Xiao-Wang Fan1,2,3, Jian-Ping Liu2,3**, Feng Zhang2,3, Masao Ikeda2,3, De-Yao Li2,3, Shu-Ming Zhang2,3, Li-Qun Zhang2,3, Ai-Qin Tian2,3, Peng-Yan Wen2,3, Guo-Hong Ma1, Hui Yang2,3
1Department of Physics, Shanghai University, Shanghai 200444
2Suzhou Institute of Nano-tech and Nano-bionics, University of Chinese Academy of Sciences, Suzhou 215123
3Key Laboratory of Nanodevice and Applications, Chinese Academy of Sciences, Suzhou 215123
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Abstract Electroluminescence (EL) and temperature-dependent photoluminescence measurements are performed to study the internal quantum efficiency droop phenomenon of blue laser diodes (LDs) before lasing. Based on the ABC mode, the EL result demonstrates that non-radiative recombination rates of LDs with threshold current densities of 4 and 6 kA/cm$^{2}$ are similar, while LD with threshold current density of 4 kA/cm$^{2}$ exhibits a smaller auger-like recombination rate compared with the one of 6 kA/cm$^{2}$. The internal quantum efficiency droop is more serious for LD with higher threshold current density. The internal quantum efficiency value estimated from temperature-dependent photoluminescence is consistent with EL measurements.
Received: 24 April 2017      Published: 15 August 2017
PACS:  78.60.Fi (Electroluminescence)  
  78.55.-m (Photoluminescence, properties and materials)  
  42.55.Px (Semiconductor lasers; laser diodes)  
Fund: Supported by the National Key Research and Development Program of China under Grant Nos 2016YFB0401803 and 2016YFB0402002, the National Natural Science Foundation of China under Grant Nos 61574160 and 61334005, the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No XDA09020401, and the Visiting Professorship for Senior International Scientists of the Chinese Academy of Sciences under Grant No 2013T2J0048.
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Xiao-Wang Fan, Jian-Ping Liu, Feng Zhang et al  2017 Chin. Phys. Lett. 34 097801
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http://cpl.iphy.ac.cn/10.1088/0256-307X/34/9/097801       OR      http://cpl.iphy.ac.cn/Y2017/V34/I9/097801
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Xiao-Wang Fan
Jian-Ping Liu
Feng Zhang
Masao Ikeda
De-Yao Li
Shu-Ming Zhang
Li-Qun Zhang
Ai-Qin Tian
Peng-Yan Wen
Guo-Hong Ma
Hui Yang
[1]Funato M, Kim Y S, Hira T et al 2013 Appl. Phys. Express 6 111002
[2]Tyagi A, Farrell R M, Kelchner K M et al 2010 Appl. Phys. Express 3 011002
[3]Karpov S 2015 Opt. Quantum Electron. 47 1293
[4]Kim M H, Schubert M F, Dai Q et al 2007 Appl. Phys. Lett. 91 183507
[5]Akyol F, Nath D N, Krishnamoorthy S et al 2012 Appl. Phys. Lett. 100 111118
[6]Verzellesi G, Saguatti D, Meneghini M et al 2013 J. Appl. Phys. 114 071101
[7]Kopyev V V, Prudaev I A and Romanov I S 2014 J. Phys.: Conf. Ser. 541 012055
[8]Yoshida H, Kuwabara M, Yamashita Y et al 2010 Appl. Phys. Lett. 96 211122
[9]Ryu H Y, Kim H S and Shim J I 2009 Appl. Phys. Lett. 95 081114
[10]David A and Grundmann M J 2010 Appl. Phys. Lett. 97 033501
[11]Shen Y C, Mueller G O, Watanabe S et al 2007 Appl. Phys. Lett. 91 141101
[12]Brendel M, Kruse A, Jönen H et al 2011 Appl. Phys. Lett. 99 031106
[13]Strauß U, Hager T, Brüderl G et al 2014 Proc. SPIE 8986 89861L
[14]Cho Y H, Gainer G H, Fischer A J et al 1998 Appl. Phys. Lett. 73 1370
[15]Schubert E F, Gessmann T and Kim J K 2005 Light Emitting Diodes (Cambridge: Cambridge University Press)
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