Chin. Phys. Lett.  2017, Vol. 34 Issue (9): 097301    DOI: 10.1088/0256-307X/34/9/097301
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements
Zhi-Fu Zhu1,2,3, He-Qiu Zhang4**, Hong-Wei Liang4, Xin-Cun Peng2, Ji-Jun Zou2**, Bin Tang2, Guo-Tong Du1,4,5
1School of Physics, Dalian University of Technology, Dalian 116024
2Engineering Research Center of Nuclear Technology Application (Ministry of Education), East China Institute of Technology, Nanchang 330013
3Jiangxi Province Engineering Research Center of New Energy Technology and Equipment (Ministry of Education), East China Institute of Technology, Nanchang 330013
4School of Microelectronics, Dalian University of Technology, Dalian 116024
5State Key Laboratory on Integrated Optoelectronics, School of Electronic Science and Engineering, Jilin University, Changchun 130012
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Abstract For the frequency range of 1 kHz–10 MHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage ($C$–$V$) and conductance-frequency-voltage ($G$–$f$–$V$) measurements at room temperature. To obtain the real capacitance and interface state density of the Ni/p-GaN structures, the effects of the series resistance ($R_{\rm s}$) on high-frequency (5 MHz) capacitance values measured at a reverse and a forward bias are investigated. The mean interface state densities obtained from the $C_{\rm HF}$–$C_{\rm LF}$ capacitance and the conductance method are $2\times10^{12}$ eV$^{-1}$cm$^{-2}$ and $0.94\times10^{12}$ eV$^{-1}$cm$^{-2}$, respectively. Furthermore, the interface state density derived from the conductance method is higher than that reported from the Ni/n-GaN in the literature, which is ascribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN.
Received: 24 April 2017      Published: 15 August 2017
PACS:  73.20.At (Surface states, band structure, electron density of states)  
  73.40.-c (Electronic transport in interface structures)  
  73.50.-h (Electronic transport phenomena in thin films)  
Fund: Supported by the Natural Science Foundation of Jiangxi Province under Grant No 20133ACB20005, the Key Program of National Natural Science Foundation of China under Grant No 41330318, the Key Program of Science and Technology Research of Ministry of Education under Grant No NRE1515, the Foundation of Training Academic and Technical Leaders for Main Majors of Jiangxi Province under Grant No 20142BCB22006, the Research Foundation of Education Bureau of Jiangxi Province under Grant No GJJ14501, and the Engineering Research Center of Nuclear Technology Application (East China Institute of Technology) Ministry of Education under Grant No HJSJYB2016-1.
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Zhi-Fu Zhu, He-Qiu Zhang, Hong-Wei Liang et al  2017 Chin. Phys. Lett. 34 097301
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http://cpl.iphy.ac.cn/10.1088/0256-307X/34/9/097301       OR      http://cpl.iphy.ac.cn/Y2017/V34/I9/097301
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Zhi-Fu Zhu
He-Qiu Zhang
Hong-Wei Liang
Xin-Cun Peng
Ji-Jun Zou
Bin Tang
Guo-Tong Du
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