Chin. Phys. Lett.  2017, Vol. 34 Issue (8): 087701    DOI: 10.1088/0256-307X/34/8/087701
Electronic, Elastic and Piezoelectric Properties of Two-Dimensional Group-IV Buckled Monolayers
Jing Shi1, Yong Gao1, Xiao-Li Wang1**, Si-Ning Yun2**
1MOE Key Laboratory for Non-equilibrium Synthesis and Modulation of Condensed Matter, Xi'an Jiaotong University, Xi'an 710049
2Functional Materials Laboratory, School of Materials and Mineral Resources, Xi'an University of Architecture and Technology, Xi'an 710055
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Jing Shi, Yong Gao, Xiao-Li Wang et al  2017 Chin. Phys. Lett. 34 087701
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Abstract Electronic, elastic and piezoelectric properties of two-dimensional (2D) group-IV buckled monolayers (GeSi, SnSi and SnGe) are studied by first principle calculations. According to our calculations, SnSi and SnGe are good 2D piezoelectric materials with large piezoelectric coefficients. The values of $d_{11}$ of SnSi and SnGe are 5.04 pm/V and 5.42 pm/V, respectively, which are much larger than 2D MoS$_{2}$ (3.6 pm/V) and are comparable with some frequently used bulk materials (e.g., wurtzite AlN 5.1 pm/V). Charge transfer is calculated by the Löwdin analysis and we find that the piezoelectric coefficients ($d_{11}$ and $d_{31}$) are highly dependent on the polarizabilities of the anions and cations in group-IV monolayers.
Received: 28 February 2017      Published: 22 July 2017
PACS:  77.84.-s (Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)  
  73.20.At (Surface states, band structure, electron density of states) (Elastic moduli)  
  82.45.Mp (Thin layers, films, monolayers, membranes)  
Fund: Supported by the National Natural Science Foundation of China under Grant No 51672208, the National Science and Technology Pillar Program during the Twelfth Five-Year Plan Period under Grant No 2012BAD47B02, the Sci-Tech Research and Development Program of Shaanxi Province under Grant Nos 2010K01-120, 2011JM6010 and 2015JM5183, the Shaanxi Provincial Department of Education under Grant No 2013JK0927, and the SRF for ROCS of SEM.
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Jing Shi
Yong Gao
Xiao-Li Wang
Si-Ning Yun
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