| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Experimental $I$–$V$ and $C$–$V$ Analysis of Schottky-Barrier Metal-Oxide-Semiconductor Field Effect Transistors with Epitaxial NiSi$_{2}$ Contacts and Dopant Segregation |
| Yi-Ze Wang1,5, Chang Liu1,2, Jian-Hui Cai1,3, Qiang Liu1,3, Xin-Ke Liu4, Wen-Jie Yu1**, Qing-Tai Zhao2 |
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2Peter Grünberg Institute 9, JARA-FIT, Forschungszentrum Jülich, Jülich 52425, Germany
3College of Sciences, Shanghai University, Shanghai 200444
4College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060
5University of Chinese Academy of Sciences, Beijing 100049
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| Cite this article: |
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Yi-Ze Wang, Chang Liu, Jian-Hui Cai et al 2017 Chin. Phys. Lett. 34 078501 |
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Abstract We present an experimental analysis of Schottky-barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) fabricated on ultrathin body silicon-on-insulator substrates with a steep junction by the dopant implantation into the silicide process. The subthreshold swing of such SB-MOSFETs reaches 69 mV/dec. Emphasis is placed on the capacitance-voltage analysis of p-type SB-MOSFETs. According to the measurements of gate-to-source capacitance $C_{\rm gs}$ with respect to $V_{\rm gs}$ at various $V_{\rm ds}$, we find that a maximum occurs at the accumulation regime due to the most imbalanced charge distribution along the channel. At each $C_{\rm gs}$ peak, the difference between $V_{\rm gs}$ and $V_{\rm ds}$ is equal to the Schottky barrier height (SBH) for NiSi$_{2}$ on highly doped silicon, which indicates that the critical condition of channel pinching off is related with SBH for source/drain on channel. The SBH for NiSi$_{2}$ on highly doped silicon can affect the pinch-off voltage and the saturation current of SB-MOSFETs.
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Received: 08 March 2017
Published: 23 June 2017
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| PACS: |
85.30.-z
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(Semiconductor devices)
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73.30.+y
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(Surface double layers, Schottky barriers, and work functions)
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61.72.uf
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(Ge and Si)
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| Fund: Supported by the National Natural Science Foundation of China under Grant No 61674161, and the Open Project of State Key Laboratory of Functional Materials for Informatics. |
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