Chin. Phys. Lett.  2017, Vol. 34 Issue (3): 038502    DOI: 10.1088/0256-307X/34/3/038502
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Memristive Behavior Based on Ba-Doped SrTiO$_{3}$ Films
Gang Dou, Yang Yu, Mei Guo**, Yu-Man Zhang, Zhao Sun, Yu-Xia Li
College of Electrical Engineering and Automation, Shandong University of Science and Technology, Qingdao 266590
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Gang Dou, Yang Yu, Mei Guo et al  2017 Chin. Phys. Lett. 34 038502
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Abstract The Sr$_{0.95}$Ba$_{0.05}$TiO$_{3}$ (SBT) nanometer film is prepared on the commercially available Pt/TiO$_{2}$/SiO$_{2}$/Si substrate by radio-frequency magnetron sputtering. The x-ray diffraction pattern and the scanning electron microscope image of the cross-sectional profile of the SBT nanometer film are depicted. The memristive mechanism is inferred. The mathematical model $M(q)=12.3656-267.4038|q(t)|$ is calculated, where $M(q)$ denotes the memristance depending on the quantity of electric charge, and $q(t)$ denotes the quantity of electric charge depending on the time. The theoretical $I$–$V$ characteristics of the SBT nanometer film are obtained by the mathematical model. The results show that the theoretical $I$–$V$ characteristics are consistent with the measured $I$–$V$ characteristics. Moreover, the mathematical model could guide the research on applications of the memristor.
Received: 09 November 2016      Published: 28 February 2017
PACS:  85.25.Hv (Superconducting logic elements and memory devices; microelectronic circuits)  
  84.32.-y (Passive circuit components)  
  84.32.Ff (Conductors, resistors (including thermistors, varistors, and photoresistors))  
Fund: Supported by the National Natural Science Foundation of China under Grant No 61473177, the Research Fund for the Doctoral Program of Higher Education of China under Grant Nos 2013371812009 and 20133718110011, the Natural Science Foundation of Shandong Province under Grant No ZR2014FQ006, the China Postdoctoral Science Foundation under Grant No 2015M582114, the Shandong Postdoctoral Special Foundation under Grant No 201502017, the Qingdao Science and Technology Plan Project under Grant No 15-9-1-39-jch, and the Qingdao Postdoctoral Science Foundation.
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https://cpl.iphy.ac.cn/10.1088/0256-307X/34/3/038502       OR      https://cpl.iphy.ac.cn/Y2017/V34/I3/038502
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Gang Dou
Yang Yu
Mei Guo
Yu-Man Zhang
Zhao Sun
Yu-Xia Li
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