| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Fabrication and Characterization of a GaN-Based 320$\times$256 Micro-LED Array |
| Xiao-Fan Mo, Wei-Zong Xu, Hai Lu**, Dong Zhou, Fang-Fang Ren, Dun-Jun Chen, Rong Zhang, You-Dou Zheng |
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
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| Cite this article: |
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Xiao-Fan Mo, Wei-Zong Xu, Hai Lu et al 2017 Chin. Phys. Lett. 34 118102 |
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Abstract Design, fabrication and characterizations of GaN-based blue micro light emitting diode (LED) arrays are reported. The GaN micro-LED array consists of $320\times256$ pixels with a pitch size of 30 μm. Each pixel is $25\times25$ μm$^{2}$ in size, which is designed for backside emission and high density flip-chip packaging. The selected LED pixels being tested exhibit good uniformity in terms of turn-on voltage and reverse leakage current. The efficiency droop behavior and reliability behavior under high forward current stress are also studied. The micro-LED pixel shows improved reliability, which is likely caused by enhanced heat dissipation.
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Received: 22 May 2017
Published: 25 October 2017
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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85.60.Jb
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(Light-emitting devices)
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72.10.Bg
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(General formulation of transport theory)
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| Fund: Supported by the National Key Research and Development Program under Grant No 2016YFB0400902, and the Science and Technology Project of State Grid Corporation of China under Grant No SGSDDK00KJJS1600071. |
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