| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Copper Ion Beam Irradiation-Induced Effects on Structural, Morphological and Optical Properties of Tin Dioxide Nanowires |
| M. A. Khan1**, A. Qayyum1, I. Ahmed2,3,4, T. Iqbal1, A. A. Khan1, R. Waleed1, B. Mohuddin1, M. Malik3,4 |
1Department of Physics, University of Azad Jammu and Kashmir, Muzaffarabad 13100, Pakistan
2National Center of Physics, Quaid-i-Azam University Campus, Islamabad, Pakistan
3UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, PO Box 392, Pretoria, South Africa
4Nanosciences African Network, iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, P.O. Box 722, Somerset West, Western Cape Province, South Africa
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| Cite this article: |
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M. A. Khan, A. Qayyum, I. Ahmed et al 2016 Chin. Phys. Lett. 33 078102 |
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Abstract The 0.8 MeV copper (Cu) ion beam irradiation-induced effects on structural, morphological and optical properties of tin dioxide nanowires (SnO$_{2}$ NWs) are investigated. The samples are irradiated at three different doses $5\times10^{12}$ ions/cm$^{2}$, $1\times10^{13}$ ions/cm$^{2}$ and $5\times10^{13}$ ions/cm$^{2}$ at room temperature. The XRD analysis shows that the tetragonal phase of SnO$_{2}$ NWs remains stable after Cu ion irradiation, but with increasing irradiation dose level the crystal size increases due to ion beam induced coalescence of NWs. The FTIR spectra of pristine SnO$_{2}$ NWs exhibit the chemical composition of SnO$_{2}$ while the Cu–O bond is also observed in the FTIR spectra after Cu ion beam irradiation. The presence of Cu impurity in SnO$_{2}$ is further confirmed by calculating the stopping range of Cu ions by using TRM/SRIM code. Optical properties of SnO$_{2}$ NWs are studied before and after Cu ion irradiation. Band gap analysis reveals that the band gap of irradiated samples is found to decrease compared with the pristine sample. Therefore, ion beam irradiation is a promising technology for nanoengineering and band gap tailoring.
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Received: 13 February 2016
Published: 01 August 2016
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| PACS: |
81.05.Hd
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(Other semiconductors)
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81.07.Gf
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(Nanowires)
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61.46.Km
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(Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))
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61.80.Jh
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(Ion radiation effects)
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