| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Evolution of Magnetic Domain Structure in a YIG Thin Film |
| Ran Wang1, Ya-Xuan Shang1, Rui Wu2, Jin-Bo Yang2,3, Yang Ji1** |
1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871
3Collaborative Innovation Center of Quantum Matter, Beijing 100871
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| Cite this article: |
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Ran Wang, Ya-Xuan Shang, Rui Wu et al 2016 Chin. Phys. Lett. 33 047502 |
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Abstract The evolution of a magnetic domain structure induced by temperature and magnetic field is reported in silicon-doped yttrium iron garnet (YIG) films with perpendicular anisotropy. During a cooling-down procedure from 300 K to 7 K, a 20% change in the domain width is observed, with the long tails of the stripes being shortened and the twisting stripes being straightened. Under the influence of the stray field of a barium ferrite, the garnet presents an interesting domain structure, which shows an appearance of branching protrusions. The intrinsic mechanisms in these two processes are also discussed.
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Received: 04 November 2015
Published: 29 April 2016
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| PACS: |
75.78.Fg
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(Dynamics of domain structures)
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85.70.Kh
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(Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.)
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75.30.Gw
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(Magnetic anisotropy)
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Abstract
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