| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Comprehensive Study of SF$_{6}$/O$_{2}$ Plasma Etching for Mc-Silicon Solar Cells |
| Tao Li**, Chun-Lan Zhou, Wen-Jing Wang |
Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190
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| Cite this article: |
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Tao Li, Chun-Lan Zhou, Wen-Jing Wang 2016 Chin. Phys. Lett. 33 038801 |
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Abstract The mask-free SF$_{6}$/O$_{2}$ plasma etching technique is used to produce surface texturization of mc-silicon solar cells for efficient light trapping in this work. The SEM images and mc-silicon etching rate show the influence of plasma power, SF$_{6}$/O$_{2}$ flow ratios and etching time on textured surface. With the acidic-texturing samples as a reference, the reflection and IQE spectra are obtained under different experimental conditions. The IQE spectrum measurement shows an evident increase in the visible and infrared responses. By using the optimized plasma power, SF$_{6}$/O$_{2 }$flow ratios and etching time, the optimal efficiency of 15.7% on $50\times50$ mm$^{2}$ reactive ion etching textured mc-silicon silicon solar cells is achieved, mostly due to the improvement in the short-circuit current density. The corresponding open-circuit voltage, short-circuit current density and fill factor are 611 mV, 33.6 mA/cm$^{2}$, 76.5%, respectively. It is believed that such a low-cost and high-performance texturization process is promising for large-scale industrial silicon solar cell manufacturing.
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Received: 11 August 2015
Published: 31 March 2016
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