| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Electrical Instability of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Ultraviolet Illumination |
| Lan-Feng Tang1,2, Hai Lu1,2**, Fang-Fang Ren1,2, Dong Zhou1,2, Rong Zhang1,2, You-Dou Zheng1,2, Xiao-Ming Huang3, |
1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
2Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093
3Peter Grünberg Research Center, Nanjing University of Posts and Telecommunications, Nanjing 210003
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| Cite this article: |
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Lan-Feng Tang, Hai Lu, Fang-Fang Ren et al 2016 Chin. Phys. Lett. 33 038502 |
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Abstract The electrical instability behaviors of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under ultraviolet (UV) illumination are studied. As UV radiation dosage increases, the turn-on voltage of the TFT shows continuous negative shift, which is accompanied by enhanced degradation of sub-threshold swing and field-effect mobility. The electrical instability is caused by the increased carrier concentration and defect states within the device channel, which can be further attributed to additional oxygen vacancy generation and ionization of oxygen vacancy related defects upon UV illumination, respectively. Furthermore, the performance of the a-IGZO TFT treated with UV radiation can gradually recover to its initial state after long-time storage.
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Received: 02 December 2015
Published: 31 March 2016
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| PACS: |
85.40.-e
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(Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)
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73.61.Jc
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(Amorphous semiconductors; glasses)
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85.30.Tv
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(Field effect devices)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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