| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Light-Emitting Diodes Based on All-Quantum-Dot Multilayer Films and the Influence of Various Hole-Transporting Layers on the Performance |
| Hui-Li Yin1,2, Su-Ling Zhao1,2**, Zheng Xu1,2, Li-Zhi Sun1,2 |
1Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044
2Key Laboratory of Luminescence and Optical Information (Ministry of Education), Beijing Jiaotong University, Beijing 100044
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| Cite this article: |
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Hui-Li Yin, Su-Ling Zhao, Zheng Xu et al 2016 Chin. Phys. Lett. 33 037301 |
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Abstract We present a systematic analysis of the exciton-recombination zone within all-quantum-dot (QD) multilayer films using sensing QD layers in QD-based light-emitting diodes (QLEDs), and demonstrate the all-QD multilayer films with different sequences of layers prepared by inserting a sensing blue QD layer denoted as B at various positions within four red QD multilayers denoted as R. We also use different hole transporting layers (PVK, CBP as well as poly-TPD) to prevent the formation of leakage current and to improve the luminance. The results show that the total EL emission is mostly at the fourth (60%) and fifth (40%) QD monolayers, adjacent to ITO. This presents both decreasing current density and increasing brightness with different hole transporting layers, thus resulting in more efficient performance.
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Received: 05 December 2015
Published: 31 March 2016
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| PACS: |
73.21.La
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(Quantum dots)
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71.35.Cc
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(Intrinsic properties of excitons; optical absorption spectra)
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73.50.Gr
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(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)
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