| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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C-Implanted N-Polar GaN Films Grown by Metal Organic Chemical Vapor Deposition |
| Ying Zhao, Sheng-Rui Xu**, Zhi-Yu Lin, Jin-Cheng Zhang, Teng Jiang, Meng-Di Fu, Jia-Duo Zhu, Qin Lu, Yue Hao |
Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071
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| Cite this article: |
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Ying Zhao, Sheng-Rui Xu, Zhi-Yu Lin et al 2016 Chin. Phys. Lett. 33 128102 |
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Abstract C-implantation N-polar GaN films are grown on $c$-plane sapphire substrates by metal organic chemical vapor deposition. C-implantation induces a large number of defects and causes disorder of the lattice structure in the N-polar GaN film. Raman measurements performed on the N-polar GaN film before C-implantation after C-implantation and subsequent annealing at 1050$^{\circ}\!$C for 5 min indicate that after annealing the disordered GaN lattice is almost recovered. High resolution x-ray diffraction shows that after implantation there is an obvious increase of screw-dislocation densities, and the densities of edge dislocation show slight change. Carbon implantation can induce deep acceptors in GaN, thus the background carriers induced by the high oxygen incorporation in the N-polar GaN film will be partially compensated for, resulting in 25 times the resistivity, which is demonstrated by the temperature-dependent Hall-effect measurement.
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Received: 27 September 2016
Published: 29 December 2016
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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81.10.Aj
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(Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
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71.55.Eq
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(III-V semiconductors)
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78.55.Ap
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(Elemental semiconductors)
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| Fund: Supported by the National Natural Science Foundation of China under Grant Nos 61204006, 61574108, 61334002, 61474086 and 51302306. |
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