| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Micro-Mechanism of Silicon-Based Waveguide Surface Smoothing in Hydrogen Annealing |
| Qian-Qian Duan1,2, Xin-Yu Ren1,2, Ao-Qun Jian1,2, Hui Zhang1,2, Jian-Long Ji1,2, Qiang Zhang1,2, Wen-Dong Zhang1,2, Sheng-Bo Sang1,2** |
1Micro Nano System Research Center, College of Information Engineering, Taiyuan University of Technology, Taiyuan 030600
2Key Laboratory of Advanced Transducers and Intelligent Control System (Ministry of Education), Taiyuan University of Technology, Taiyuan 030600
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| Cite this article: |
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Qian-Qian Duan, Xin-Yu Ren, Ao-Qun Jian et al 2016 Chin. Phys. Lett. 33 126801 |
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Abstract The micro-mechanism of the silicon-based waveguide surface smoothing is investigated systematically to explore the effects of silicon-hydrogen bonds on high-temperature hydrogen annealing waveguides. The effect of silicon-hydrogen bonds on the surface migration movement of silicon atoms and the waveguide surface topography are revealed. The micro-migration from an upper state to a lower state of silicon atoms is driven by silicon-hydrogen bonding, which is the key to ameliorate the rough surface morphology of the silicon-based waveguide. The process of hydrogen annealing is experimentally validated based on the simulated parameters. The surface roughness declines from 1.523 nm to 0.461 nm.
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Received: 20 August 2016
Published: 29 December 2016
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| PACS: |
68.35.Ct
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(Interface structure and roughness)
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68.35.Md
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(Surface thermodynamics, surface energies)
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68.47.Fg
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(Semiconductor surfaces)
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| Fund: Supported by the National Natural Science Foundation of China under Grant Nos 51505324, 91123036, 61471255 and 61474079, the Specialized Research Fund for the Doctoral Program of Higher Education under Grant No 20131402110013, and the Foundation for Young Scholars of Shanxi Province under Grant No 2014021023-3. |
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