| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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GaInP/GaInAs/GaInNAs/Ge Four-Junction Solar Cell Grown by Metal Organic Chemical Vapor Deposition with High Efficiency |
| Yang Zhang1,2, Qing Wang1**, Xiao-Bin Zhang2, Zhen-Qi Liu2, Bing-Zhen Chen2, Shan-Shan Huang2, Na Peng2, Zhi-Yong Wang1 |
1Institute of Laser Engineering, Beijing University of Technology, Beijing 100022
2Redsolar New Energy Technology Co. Ltd., Zhongshan 528437
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| Cite this article: |
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Yang Zhang, Qing Wang, Xiao-Bin Zhang et al 2016 Chin. Phys. Lett. 33 108801 |
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Abstract We directly grow a lattice matched GaInP/GaInAs/GaInNAs/Ge (1.88 eV/1.42 eV/1.05 eV/0.67 eV) four-junction (4J) solar cell on a Ge substrate by the metal organic chemical vapor deposition technology. To solve the current limit of the GaInNAs sub cell, we design three kinds of anti-reflection coatings and adjust the base region thickness of the GaInNAs sub cell. Developed by a series of experiments, the external quantum efficiency of the GaInNAs sub cell exceeds 80%, and its current density reaches 11.24 mA/cm$^{2}$. Therefore the current limit of the 4J solar cell is significantly improved. Moreover, we discuss the difference of test results between 4J and GaInP/GaInAs/Ge solar cells under the 1 sun AM0 spectrum.
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Received: 08 June 2016
Published: 27 October 2016
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| PACS: |
88.40.jp
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(Multijunction solar cells)
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88.40.hj
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(Efficiency and performance of solar cells)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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