| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Band Edge Emission Improvement by Energy Transfer in Hybrid III-Nitride/Organic Semiconductor Nanostructure |
| Fu-Long Jiang1, Ya-Ying Liu1, Yang-Yang Li1, Peng Chen1,2**, Bin Liu1, Zi-Li Xie1, Xiang-Qian Xiu1, Xue-Mei Hua1, Ping Han1, Yi Shi1, Rong Zhang1, You-Dou Zheng1 |
1Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
2Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009
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| Cite this article: |
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Fu-Long Jiang, Ya-Ying Liu, Yang-Yang Li et al 2016 Chin. Phys. Lett. 33 108101 |
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Abstract GaN nanorods are fabricated using inductively coupled plasma etching with Ni nano-island masks. The poly [2-methoxy-5-(2-ethyl)hexoxy-1,4-phenylenevinylene] (MEH-PPV)/GaN-nanorod hybrid structure is fabricated by depositing the MEH-PPV film on the GaN nanorods by using the spin-coating process. In the hybrid structure, the spatial separation is minimized to achieve high-efficiency non-radiative resonant energy transfer. Optical properties of a novel device consisting of MEH-PPV/GaN-nanorod hybrid structure is studied by analyzing photoluminescence (PL) spectra. Compared with the pure GaN nanorods, the PL intensity of the band edge emission of GaN in the MEH-PPV/GaN-nanorods is enhanced as much as three times, and the intensity of the yellow band is suppressed slightly. The obtained results are analyzed by energy transfer between the GaN nanorods and the MEH-PPV. An energy transfer model is proposed to explain the phenomenon.
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Received: 19 April 2016
Published: 27 October 2016
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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81.07.Pr
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(Organic-inorganic hybrid nanostructures)
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78.55.Cr
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(III-V semiconductors)
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| Fund: Supported by the National Key Technology Research and Development Program under Grant No 2016YFB0400100, the National Basic Research Program of China under Grant No 2012CB619304, the High-Technology Research and Development Program of China under Grant Nos 2014AA032605 and 2015AA033305, the National Natural Science Foundation of China under Grant Nos 61274003, 61422401, 51461135002 and 61334009, the Key Technology Research of Jiangsu Province under Grant No BE2015111, the Solid State Lighting and Energy-Saving Electronics Collaborative Innovation Center, and the Research Funds from NJU-Yangzhou Institute of Opto-electronics. |
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