| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effect of Residual Charge Carrier on the Performance of a Graphene Field Effect Transistor |
| Sedighe Salimian**, Mohammad Esmaeil Azim Araghi |
Faculty of Physics, Kharazmi University, Tehran, Iran
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| Cite this article: |
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Sedighe Salimian, Mohammad Esmaeil Azim Araghi 2016 Chin. Phys. Lett. 33 017201 |
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Abstract The temperature-dependent effect of residual charge carrier ($n_{0})$, at the Dirac point, on mobility is studied. We fabricate and characterize a graphene field effect transistor (GFET) using 7 nm TiO$_{2}$ as the top-gate dielectric. The temperature-dependent gate voltage-drain current and room temperature gate capacitance are measured to extract the carrier mobility and to estimate the quantum capacitance of the GFET. The device shows the mobility value of 900 cm$^{2}$/V$\cdot$s at room temperature and it decreases to 45 cm$^{2}$/V$\cdot$s for 20 K due to the increase of $n_{0}$. These results indicate that the phonon scattering is not the dominant process for the unevenness dielectric layer while the coulomb scattering by charged impurities degrades the device characteristically at low temperature.
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Received: 07 October 2015
Published: 29 January 2016
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| PACS: |
72.80.Vp
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(Electronic transport in graphene)
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73.40.Cg
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(Contact resistance, contact potential)
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73.40.Sx
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(Metal-semiconductor-metal structures)
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