| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped GaN |
| CHAI Xu-Zhao, ZHOU Dong, LIU Bin, XIE Zi-Li, HAN Ping**, XIU Xiang-Qian, CHEN Peng, LU Hai, ZHANG Rong, ZHENG You-Dou |
School of Electronic Science and Engineering, National Laboratory of Solid State Microstructure, and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093
|
|
| Cite this article: |
|
CHAI Xu-Zhao, ZHOU Dong, LIU Bin et al 2015 Chin. Phys. Lett. 32 097804 |
|
|
|
|
Abstract The effect of high-temperature annealing on the yellow and blue luminescence of the undoped GaN is investigated by photoluminescence (PL) and x-ray photoelectron spectroscopy (XPS). It is found that the band-edge emission in the GaN apparently increases, and the yellow luminescence (YL) and blue luminescence (BL) bands dramatically decrease after annealing at 700°C. At the annealing temperature higher than 900°C, the YL and BL intensities show an enhancement for the nitrogen annealed GaN. This fact should be attributed to the increment of the Ga and N vacancies in the GaN decomposition. However, the integrated PL intensity of the oxygen annealed GaN decreases at the temperature ranging from 900°C to 1000°C. This results from the capture of many photo-generated holes by high-density surface states. XPS characterization confirms that the high-density surface states mainly originate from the incorporation of oxygen atoms into GaN at the high annealing temperature, and even induces the 0.34 eV increment of the upward band bending for the oxygen annealed GaN at 1000°C.
|
|
|
Received: 26 June 2015
Published: 02 October 2015
|
|
| PACS: |
78.66.Fd
|
(III-V semiconductors)
|
| |
81.40.Tv
|
(Optical and dielectric properties related to treatment conditions)
|
| |
82.80.Pv
|
(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))
|
|
|
|
|
|
[1] Nakamura S, Mukai T and Senoh M 1994 Appl. Phys. Lett. 64 1687
[2] Ponce F A and Bour D P 1997 Nature 386 351
[3] Neugebauer J and Van de Walle C G 1996 Appl. Phys. Lett. 69 503
[4] Reshchikov M A and Morko? H 2005 J. Appl. Phys. 97 061301
[5] Demchenko D O and Reshchikov M A 2013 Phys. Rev. B 88 115204
[6] Hou Q F, Wang X L, Xiao H L, Wang C M, Yang C B, Yin H B, Li J M and Wang Z G 2011 Chin. Phys. Lett. 28 037102
[7] Zhao D G, Jiang D S, Zhu J J, Liu Z S, Zhang S M, Liang J W and Yang H 2007 J. Appl. Phys. 102 113521
[8] Li G, Chua S J, Xu S J, Wang W, Li P, Beaumont B and Gibart P 1999 Appl. Phys. Lett. 74 2821
[9] Suresh S, Lourdudoss S, Landgren G and Baskar K 2010 J. Cryst. Growth 312 3151
[10] Fang Z L, Li S P, Li J C, Sun H Z, Wang S J and Kang J Y 2008 Thin Solid Films 516 6344
[11] Zhu C F, Fong W K, Leung B H, Cheng C C and Surya C 2001 IEEE Trans. Electron Devices 48 1225
[12] Li X B, Sun D Z, Zhang J P, Kong M Y and Yoon S F 1998 Appl. Phys. Lett. 72 936
[13] Huang H Y, Xiao J Q, Ku C S, Chuang H M, Chen W K, Chen W H, Lee M C and Lee H Y 2002 J. Appl. Phys. 92 4129
[14] Lin M E, Sverdlov B N and Morko? H 1993 Appl. Phys. Lett. 63 3625
[15] Hayes J M, Kuball M, Bell A, Harrison I, Korakakis D and Foxon C T 1999 Appl. Phys. Lett. 75 2097
[16] Lee D G, Wakamatsu R, Koizumi A, Terai Y, Poplawsky J D, Dierolf V and Fujiwara Y 2013 Appl. Phys. Lett. 102 141904
[17] Rana M A, Osipowicz T, Choi H W, Breese M B H, Watt F and Chua S J 2003 Appl. Phys. A 77 103
[18] Chand N, People R, Baiocchi F A, Wecht K W and Cho A Y 1986 Appl. Phys. Lett. 49 815
[19] Yamaguchi M, Tachikawa M, Itoh Y, Sugo M and Kondo S 1990 J. Appl. Phys. 68 4518
[20] Elsner J, Jones R, Sitch P K, Haugk M, Frauenheim T, Heggie M, ?berg S and Briddon P R 1998 Phys. Rev. B 58 12571
[21] Duan T L, Pan J S and Ang D S 2013 Appl. Phys. Lett. 102 201604
[22] Wu C I, Kahn A, Taskar N, Dorman D and Gallagher D 1998 J. Appl. Phys. 83 4249
[23] Garcia M A, Wolter S D, Kim T H, Choi S, Baier J, Brown A, Losurdo M and Bruno G 2006 Appl. Phys. Lett. 88 013506
[24] Bermudez V M 2002 Surf. Sci. 499 124
[25] Hashizume T, Ootomo S, Oyama S, Konishi M and Hasegawa H 2001 J. Vac. Sci. Technol. B 19 1675 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
