| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
|
|
|
|
Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors |
| LI Pei1,2, GUO Hong-Xia1,2,3**, GUO Qi1,2, ZHANG Jin-Xin4, WEI Ying1,2, |
1Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011
2University of Chinese Academy of Sciences, Beijing 100049
3Northwest Institution of Nuclear Technology, Xi'an 710024
4School of Nuclear Science and Tecnology, Xi'an Jiao Tong University, Xi'an 710049
|
|
| Cite this article: |
|
LI Pei, GUO Hong-Xia, GUO Qi et al 2015 Chin. Phys. Lett. 32 088505 |
|
|
|
|
Abstract We present a study on the single event transient (SET) induced by a pulsed laser in different silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) with the structure of local oxidation of silicon (LOCOS) and deep trench isolation (DTI). The experimental results are discussed in detail and it is demonstrated that a SiGe HBT with the structure of LOCOS is more sensitive than the DTI SiGe HBT in the SET. Because of the limitation of the DTI structure, the charge collection of diffusion in the DTI SiGe HBT is less than that of the LOCOS SiGe HBT. The SET sensitive area of the LOCOS SiGe HBT is located in the collector-substrate (C/S) junction, while the sensitive area of the DTI SiGe HBT is located near to the collector electrodes.
|
|
|
Received: 25 May 2015
Published: 02 September 2015
|
|
| PACS: |
85.30.Pq
|
(Bipolar transistors)
|
| |
61.80.Az
|
(Theory and models of radiation effects)
|
| |
73.40.Lq
|
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
|
| |
61.80.-x
|
(Physical radiation effects, radiation damage)
|
|
|
|
|
|
[1] Cressler J D 2013 IEEE Trans. Nucl. Sci. 60 1992
[2] Cressler J D 2005 Proc. IEEE (Albuquerque, USA) vol 26 p 1559
[3] Wei-Min L K, Krithivasan R, Xiangtao Li, Yuan Lu, Cressler J D, Gustat H and Heinemann B 2006 IEEE Microwave Wireless Compon. Lett. 16 520
[4] Duerr W, Menzel W and Schumacher H 1997 IEEE Microwave Guided Wave Lett. 7 63
[5] Cressler J D and Niu G F 2003 Silicon-germanium Heterojunction Bipolar Transistors (Norwood: Artech House) p 95
[6] Babcock J A, Cressler J D, Vempati L S, Clark S D, Jaeger R C and Harame D L 1995 IEEE Trans. Nucl. Sci. 42 1558
[7] Lu Y, Cressler J D, Krithivasan R, Li Y, Reed R A, Marshall P W, Polar C, Freeman G and Ahlgren D 2003 IEEE Trans. Nucl. Sci. 50 1811
[8] Sutton A K, Haugerud B M, Prakash A P G, Jun B, Cressler J D, Marshall C J, Marshall P W, Ladbury R and Joseph A J 2005 IEEE Trans. Nucl. Sci. 52 2358
[9] Krithivasan R, Niu G F, Cressler J D, Currie S M, Fritz K E, Reed R A, Marshall P W, Riggs P A, Randall B A and Gilbert B 2003 IEEE Trans. Nucl. Sci. 50 2126
[10] Krithivasan R, Marshall P W, Nayeem M, Sutton A K, Wei-Min Kuo, Haugerud B M, Najafizadeh L, Cressler J D, Carts M A, Marshall C J, Hansen D L, Jobe K C M, McKay A L, Niu G F, Reed R A, Randall B A, Burfield C A, Lindberg M D, Gilbert B K and Daniel E S IEEE Trans. Nucl. Sci. 53 3400
[11] Reed R A, Marshall P W, Pickel J C, Carts M A, Fodness B, Niu G F, Fritz K, Vizkelethy G, Dodd P E, Irwin T L, Cressler J D, Krithivasan R, Riggs P A, Prairie J, Randall B A, Gilbert B K and Label K A 2003 IEEE Trans. Nucl. Sci. 50 2184
[12] Sutton A K, Bellini M, Cressler J D, Pellish J A, Reed R A, Marshall P W, Niu G F, Vizkelethy G, Turowski M and Raman A 2007 IEEE Trans. Nucl. Sci. 54 2044
[13] Zhang J X, Guo H X, Guo Q, Wen L, Cui J W, Xi S B, Wang X and Deng W 2013 Acta Phys. Sin. 62 048501 (in Chinese)
[14] Huang J and Han J 2004 Sci. Chin. 47 5
[15] Fu Q, Zhang W R, Jin D Y, Ding C B, Zhao Y X and Lu D 2014 Chin. Phys. B 23 114402
[16] Zhang J X, Guo H X, Wen L, Guo Q, Cui J W, Fan X, Xiao Y, Xi S B, Wang X and Deng W 2013 High Power Laser Particle Beams 25 2433 (in Chinese)
[17] Pellish J A, Reed R A, McMorrow D, Melinger J S, Jenkins P, Sutton A K, Diestelhorst R M, Phillips S D, Cressler J D, Pouget V, Pate N D, Kozub J A, Mendenhall M H, Weller R A, Schrimpf R D, Marshall P W, Tipton A D and Niu G 2008 IEEE Trans. Nucl. Sci. 55 2936
[18] Sun Y B, Fu J, Xu J, Wang Y D, Zhou W, Zhang W, Cui J, Li G Q, Liu Z H, Yu Y T, Ma Y Q, Feng G Q and Han J W 2013 Chin. Phys. B 22 056103
[19] Zhang T 2009 MS Thesis (Alabama: Auburn University)
[20] Phillips S D 2012 PhD Dissertation (Georgia: Georgia Institute of Technology) |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
