Chin. Phys. Lett.  2015, Vol. 32 Issue (08): 088502    DOI: 10.1088/0256-307X/32/8/088502
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Anomalous Channel Length Dependence of Hot-Carrier-Induced Saturation Drain Current Degradation in n-Type MOSFETs
ZHANG Chun-Wei1, LIU Si-Yang1, SUN Wei-Feng1**, ZHOU Lei-Lei1, ZHANG Yi1, SU Wei2, ZHANG Ai-Jun2, LIU Yu-Wei2, HU Jiu-Li2, HE Xiao-Wei2
1National ASIC System Engineering Technology Research Center, Southeast University, Nanjing 210096
2CSMC Technologies Corporation, Wuxi 214028
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ZHANG Chun-Wei, LIU Si-Yang, SUN Wei-Feng et al  2015 Chin. Phys. Lett. 32 088502
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Abstract The dependencies of hot-carrier-induced degradations on the effective channel length Lch, eff are investigated for n-type metal-oxide-semiconductor field effect transistor (MOSFETs). Our experiments find that, with decreasing Lch, eff, the saturation drain current (Idsat) degradation is unexpectedly alleviated. The further study demonstrates that the anomalous Lch, eff dependence of Idsat degradation is induced by the increasing influence of the substrate current degradation on the Idsat degradation with Lch, eff reducing.
Received: 08 April 2015      Published: 02 September 2015
PACS:  85.30.Tv (Field effect devices)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.30.-z (Semiconductor devices)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/32/8/088502       OR      https://cpl.iphy.ac.cn/Y2015/V32/I08/088502
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ZHANG Chun-Wei
LIU Si-Yang
SUN Wei-Feng
ZHOU Lei-Lei
ZHANG Yi
SU Wei
ZHANG Ai-Jun
LIU Yu-Wei
HU Jiu-Li
HE Xiao-Wei
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