| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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InxGa1?xN/GaN Multiple Quantum Well Solar Cells with Conversion Efficiency of 3.77% |
| LIU Shi-Ming1, XIAO Hong-Ling1, WANG Quan1,2, YAN Jun-Da1, ZHAN Xiang-Mi1, GONG Jia-Min2, WANG Xiao-Liang1,3,**, WANG Zhan-Guo1,3 |
1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083
2School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121
3Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, P. O. Box 912, Beijing 100083
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| Cite this article: |
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LIU Shi-Ming, XIAO Hong-Ling, WANG Quan et al 2015 Chin. Phys. Lett. 32 088401 |
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Abstract We report on fabrication and photovoltaic characteristics of InxGa1?xN/GaN multiple quantum well solar cells with different indium compositions and barrier thicknesses. The as-grown samples are characterized by high-resolution x-ray diffraction and reciprocal space mapping. The results show that the sample with a thick barrier thickness (10.0 nm) and high indium composition (0.23) has better crystalline quality. In addition, the dark current density-voltage (J–V) measurement of this device shows a significant decrease of leakage current, which leads to high open-circuit voltage Voc. Through the J–V characteristics under an Air Mass 1.5 Global (AM 1.5 G) illumination, this device exhibits a Voc of 1.89 V, a short-circuit current density Jsc of 3.92 mA/cm2 and a fill factor of 50.96%. As a result, the conversion efficiency (η) is enhanced to be 3.77% in comparison with other devices.
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Received: 15 May 2015
Published: 02 September 2015
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| PACS: |
84.60.Jt
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(Photoelectric conversion)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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