Chin. Phys. Lett.  2015, Vol. 32 Issue (08): 088102    DOI: 10.1088/0256-307X/32/8/088102
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Preparation of Ta-Doped TiO2 Using Ta2O5 as the Doping Source
XU Cheng1**, LIN Di1, NIU Ji-Nan1, QIANG Ying-Huai1, LI Da-Wei2, TAO Chun-Xian3
1School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221116
2Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
3Shanghai Key Laboratory of Modern Optics System, School of Optics-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093
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XU Cheng, LIN Di, NIU Ji-Nan et al  2015 Chin. Phys. Lett. 32 088102
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Abstract A novel method for preparing Ta-doped TiO2 via using Ta2O5 as the doping source is proposed. The preparation process combines the hydrothermal fluorination of Ta2O5 and the subsequent formation of Ta-doped TiO2 sol. The results show that the doped sample annealed at 393 K generates an unstable intermediate NH4TiOF3, which converts into anatase TiO2 with the increase of temperature. After annealing at ≥673 K, the Ta-doped TiO2 nanocrystals with the grain size <20 nm are obtained. Both the XRD and TG-DSC results confirm that Ta doping prevents the anatase-rutile crystal transition of TiO2. The band gap values of the doped samples, as obtained by UV-vis diffuse reflectance spectra, are smaller than that of pure anatase TiO2. The first-principle pseudopotential method calculations indicate that Ta5+ lies in the TiO2 lattice at the interstitial position.
Received: 28 April 2015      Published: 02 September 2015
PACS:  81.15.Ef  
  68.60.-p (Physical properties of thin films, nonelectronic)  
  42.79.-e (Optical elements, devices, and systems)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/32/8/088102       OR      https://cpl.iphy.ac.cn/Y2015/V32/I08/088102
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XU Cheng
LIN Di
NIU Ji-Nan
QIANG Ying-Huai
LI Da-Wei
TAO Chun-Xian
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