Chin. Phys. Lett.  2015, Vol. 32 Issue (08): 084203    DOI: 10.1088/0256-307X/32/8/084203
FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
Optimization of 1.3-μm InGaAsP/InP Electro-Absorption Modulator
WANG Hui-Tao, ZHOU Dai-Bing, ZHANG Rui-Kang, LU Dan, ZHAO Ling-Juan, ZHU Hong-Liang, WANG Wei, JI Chen**
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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WANG Hui-Tao, ZHOU Dai-Bing, ZHANG Rui-Kang et al  2015 Chin. Phys. Lett. 32 084203
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Abstract We report the simulation and experimental results of 1.3-μm InGaAsP/InP multiple quantum well (MQW) electro-absorption modulators (EAMs). In this work, the quantum confined Stark effect of the EAM is systematically analyzed through the finite element method. An optimized structure of the 1.3-μm InGaAsP/InP QW EAM is proposed for applications in 100 G ethernet. Then 1.3-μm InGaAsP/InP EAMs with f?3 dB bandwidth of over 20 GHz and extinction ratio over 20 dB at 3 V bias voltage are demonstrated.
Received: 03 April 2015      Published: 02 September 2015
PACS:  42.79.Hp (Optical processors, correlators, and modulators)  
  81.07.St (Quantum wells)  
  85.60.Bt (Optoelectronic device characterization, design, and modeling)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/32/8/084203       OR      https://cpl.iphy.ac.cn/Y2015/V32/I08/084203
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WANG Hui-Tao
ZHOU Dai-Bing
ZHANG Rui-Kang
LU Dan
ZHAO Ling-Juan
ZHU Hong-Liang
WANG Wei
JI Chen
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