| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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AlGaN Channel High Electron Mobility Transistors with an AlxGa1?xN/GaN Composite Buffer Layer |
| LI Xiang-Dong1, ZHANG Jin-Cheng1**, ZOU Yu1, MA Xue-Zhi2, LIU Chang2, ZHANG Wei-Hang1, WEN Hui-Juan1, HAO Yue1 |
1Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071
2School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
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| Cite this article: |
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LI Xiang-Dong, ZHANG Jin-Cheng, ZOU Yu et al 2015 Chin. Phys. Lett. 32 077205 |
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Abstract We report an AlGaN channel high electron mobility transistor (HEMT) on a sapphire substrate with a 1000-nm AlxGa1?xN (x=0–0.18)/GaN composite buffer layer. With a significant improvement of crystal quality, the device features a high product of ns?μn. The AlGaN channel HEMTs presented show improved performance with respect to the conventional AlGaN channel HEMTs, including the on-resistance reduced from 31.2 to 8.1 Ω?mm, saturation drain current at 2 V gate bias promoted from 218 to 540 mA/mm, peak transconductance at 10 V drain bias promoted from 100 to a state-of-the-art value of 174 mS/mm, and reverse gate leakage current reduced from 1.85×10?3 to 2.15×10?5 mA/mm at VGD=?20 V.
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Received: 27 January 2015
Published: 30 July 2015
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| PACS: |
72.80.Ey
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(III-V and II-VI semiconductors)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Tv
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(Field effect devices)
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