Design of an Electrically Written and Optically Read Non-volatile Memory Device Employing BiFeO<sub>3</sub>/Au Heterostructures with Strong Absorption Resonance

doi:10.1088/0256-307X/32/7/074204

Chin. Phys. Lett.

2015, Vol. 32

Issue (07): 074204 DOI: 10.1088/0256-307X/32/7/074204

FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS)

Design of an Electrically Written and Optically Read Non-volatile Memory Device Employing BiFeO₃/Au Heterostructures with Strong Absorption Resonance

XIAO Peng-Bo, ZHANG Wei, QU Tian-Liang^**, HUANG Yun, HU Shao-Min

College of Opto-electric Science and Engineering, National University of Defence Technology, Changsha 410073

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XIAO Peng-Bo, ZHANG Wei, QU Tian-Liang et al 2015 Chin. Phys. Lett. 32 074204

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Abstract Exploiting new concepts for dense, fast, and nonvolatile random access memory with reduced energy consumption is a significant issue for information technology. Here we design an 'electrically written and optically read' information storage device employing BiFeO₃/Au heterostructures with strong absorption resonance. The electro-optic effect is the basis for the device design, which arises from the strong absorption resonance in BiFeO₃/Au heterostructures and the electrically tunable significant birefringence of the BiFeO₃ film. We first construct a simulation calculation of the BiFeO₃/Au structure spectrum and identify absorption resonance and electro-optical modulation characteristics. Following a micro scale partition, the surface reflected light intensity of different polarization units is calculated. The results depend on electric polarization states of the BiFeO₃ film, thus BiFeO₃/Au heterostructures can essentially be designed as a type of electrically written and optically read information storage device by utilizing the scanning near-field optical microscopy technology based on the conductive silicon cantilever tip with nanofabricated aperture. This work will shed light on information storage technology.

Received: 03 April 2015 Published: 30 July 2015

PACS:	42.79.Vb	(Optical storage systems, optical disks)
	78.20.Jq	(Electro-optical effects)
	77.84.Bw	(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)

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https://cpl.iphy.ac.cn/10.1088/0256-307X/32/7/074204 OR https://cpl.iphy.ac.cn/Y2015/V32/I07/074204

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	XIAO Peng-Bo
	ZHANG Wei
	QU Tian-Liang
	HUANG Yun
	HU Shao-Min

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