Chin. Phys. Lett.  2015, Vol. 32 Issue (06): 068501    DOI: 10.1088/0256-307X/32/6/068501
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Ultralow Specific on-Resistance Trench MOSFET with a U-Shaped Extended Gate
WANG Zhuo, LI Peng-Cheng, ZHANG Bo, FAN Yuan-Hang, XU Qing, LUO Xiao-Rong**
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054
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WANG Zhuo, LI Peng-Cheng, ZHANG Bo et al  2015 Chin. Phys. Lett. 32 068501
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Abstract An ultralow specific on-resistance (Ron,sp) trench metal-oxide-semiconductor field effect transistor (MOSFET) with an improved off-state breakdown voltage (BV) is proposed. It features a U-shaped gate around the drift region and an oxide trench inserted in the drift region (UG MOSFET). In the on-state, the U-shaped gate induces a high density electron accumulation layer along its sidewall, which provides a low-resistance current path from the source to the drain, realizing an ultralow Ron,sp. The value of Ron,sp is almost independent of the drift doping concentration, and thus the UG MOSFET breaks through the contradiction relationship between Ron,sp and the off-state BV. Moreover, the oxide trench folds the drift region, enabling the UG MOSFET to support a high BV with a shortened cell pitch. The UG MOSFET achieves an Ron,sp of 2 mΩ?cm2 and an improved BV of 216 V, superior to the best existing state-of-the-art transistors at the same BV level.
Received: 26 November 2014      Published: 30 June 2015
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.30.Tv (Field effect devices)  
  85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices))  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/32/6/068501       OR      https://cpl.iphy.ac.cn/Y2015/V32/I06/068501
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Articles by authors
WANG Zhuo
LI Peng-Cheng
ZHANG Bo
FAN Yuan-Hang
XU Qing
LUO Xiao-Rong
[1] Wei J, Luo X R, Shi X L, Tian R C, Zhang B and Li Z J 2014 Proc. IEEE ISPSD (Waikoloa 15–19 June 2014) p 127
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[3] Cheng J B, Zhang B, Duan B X and Li Z J 2008 Chin. Phys. Lett. 25 262
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[5] Ludikhuize A W 2000 Proc. IEEE ISPSD (Toulouse 22–25 May 2000) p 11
[6] Kim S, Kim J and Prosack H 2012 Proc. IEEE ISPSD (Bruges 3–7 June 2012) p 185
[7] Luo X R, Fan J, Wang Y G, Lei T F, Qiao M, Zhang B and Udrea F 2011 IEEE Electron Device Lett. 32 185
[8] Fan Y H, Luo X R, Wang Pei, Zhou K, Zhang Bo and Li Z J 2013 Chin. Phys. Lett. 30 088503
[9] Vestling L, Edholm B, Olsson J, Tiensuu S and Soderbarg A 1997 Proc. IEEE ISPSD (Weimar 26–29 May 1997) p 45
[10] Syau T, Venkatraman P and Baliga B J 1994 IEEE Trans. Electron Devices 41 800
[11] Wang Y G, Luo X R, Ge R, Wu L J, Chen X and Yao G L 2011 Chin. Phys. B 20 077304
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