| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Evaluation of the Ultrafast Thermal Manipulation of Magnetization Precession in Ferromagnetic Semiconductor (Ga,Mn)As |
| LI Hang, ZHANG Xin-Hui** |
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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| Cite this article: |
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LI Hang, ZHANG Xin-Hui 2015 Chin. Phys. Lett. 32 067501 |
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Abstract We present a quantitative evaluation study of the thermal effect responsible for laser-triggered collective magnetization dynamics in a ferromagnetic (Ga,Mn)As film without applying the external magnetic field by employing the pump-probe magneto-optical spectroscopy. Our observation shows that the effect of ultrafast laser heating on the manipulation of magnetization precession in a (Ga,Mn)As film is not exactly equivalent to that of the ambient temperature increase, and needs to be carefully analyzed by considering the temperature-dependent specific heat of (Ga,Mn)As. The transient modulation of magnetocrystalline anisotropy via ultrafast laser heating at low temperature exhibits a higher sensitivity than that at high temperature. The quantitative analysis of the laser-heating manipulated magnetization precession presented in this work is helpful for evaluating the laser-triggered ultrafast magnetization dynamics in (Ga,Mn)As films.
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Received: 12 January 2015
Published: 30 June 2015
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| PACS: |
75.50.Pp
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(Magnetic semiconductors)
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75.78.Jp
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(Ultrafast magnetization dynamics and switching)
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78.47.jd
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(Time resolved luminescence)
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78.47.D-
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(Time resolved spectroscopy (>1 psec))
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