| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
|
|
|
|
Structure and Strain Properties of GaN Films Grown on Si (111) Substrates with AlxGa1?xN/AlyGa1?yN Superlattices |
| PAN Lei, NI Jin-Yu**, YU Xin-Xin, DONG Xun, PENG Da-Qing, LI Chuan-Hao, LI Zhong-Hui, CHEN Tang-Sheng |
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016
|
|
| Cite this article: |
|
PAN Lei, NI Jin-Yu, YU Xin-Xin et al 2015 Chin. Phys. Lett. 32 058103 |
|
|
|
|
Abstract GaN films with an AlxGa1?xN/AlyGa1?yN superlattice (SL) buffer layer are grown on Si(111) substrates by metal-organic chemical vapor deposition (MOCVD). The structure and strain properties of the samples are studied by optical microscopy, Raman spectroscopy, x-ray diffractometry and atomic force microscopy. The results show that the strain status and crystalline quality of the GaN layers are strongly dependent on the difference of the Al composition between AlxGa1?xN barriers and AlyGa1?yN wells in the SLs. With a large Al composition difference, the GaN film tends to generate cracks on the surface due to the severe relaxation of the SLs. Otherwise, when using a small Al composition difference, the crystalline quality of the GaN layer degrades due to the poor function of the SLs in filtering dislocations. Under an optimized condition that the Al composition difference equals 0.1, the crack-free and compressive strained GaN film with an improved crystalline quality is achieved. Therefore, the AlxGa1?xN/AlyGa1?yN SL buffer layer is a promising buffer structure for growing thick GaN films on Si substrates without crack generation.
|
|
|
Received: 28 October 2014
Published: 01 June 2015
|
|
| PACS: |
81.15.Gh
|
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
|
| |
81.05.Ea
|
(III-V semiconductors)
|
| |
82.80.Gk
|
(Analytical methods involving vibrational spectroscopy)
|
|
|
|
|
|
[1] Arulkumaran S, Vicknesh S, Ing N G, Selvaraj S L and Egawa T 2011 Appl. Phys. Express 4 084101
[2] Medjdoub F, Grimbert B, Ducatteau D and Rolland N 2013 Appl. Phys. Express 6 044001
[3] Roder C, Einfeldt S, Figge S and Hommel D 2005 Phys. Rev. B 72 085218
[4] Krost A and Dadgar A 2002 Mater. Sci. Eng. B 93 77
[5] Dadgar A, Poschenrieder M, Bl?sing J, Fehse K, Diez A and Krost A 2002 Appl. Phys. Lett. 80 3670
[6] Lee S J, Bak G H, Jeon S R, Lee S H, Kim S M, Jung S H, Lee C R, Lee I H, Leem S J and Baek J H 2008 Jpn. J. Appl. Phys. 47 3070
[7] Cong G, Lu Y, Peng W, Lin X, Wang X and Wang Z 2005 J. Cryst. Growth 276 381
[8] Able A, Wegscheider W, Engl K and Zweck J 2005 J. Cryst. Growth 276 415
[9] Yang Y B, Xiang P, Liu M G, Chen W J, He Z Y, Han X B, Ni Y Q, Yang F, Yao Y, Wu Z S, Liu Y and Zhang B J 2013 J. Cryst. Growth 376 23
[10] Yu X X, Ni J Y, Li Z H, Kong C, Zhou J J, Dong X, Pan L, Kong Y C and Chen T S 2014 Chin. Phys. Lett. 31 037201
[11] Shen X Q, Takahashi T, Kawashima H, Ide T and Shimizu M 2012 Appl. Phys. Lett. 101 031912
[12] Sugahara T, Lee J S and Qhtsuka K 2004 Jpn. J. Appl. Phys. 43 L1595
[13] Feltin E, Beaumont B, Laügt M, Mierry P, Vennéguès P, Lahrèche H, Leroux M and Gibart P 2001 Appl. Phys. Lett. 79 3230
[14] Nikishin S A, Faleev N N, Antipov V G, Francoeur S, Peralta L G, Seryogin G A, Temkin H, Prokofyeva T I, Holtz M and Chu S N G 1999 Appl. Phys. Lett. 75 2073
[15] Jang S H and Lee C R 2003 J. Cryst. Growth 253 64
[16] Kim D W and Lee C R 2006 J. Cryst. Growth 286 235
[17] Piotr P, Claude J C, Jean P I, Alfonso S M, Izabella G and Alain P 1992 Phys. Rev. B 45 83
[18] Komiyama J, Abe Y, Suzuki S and Nakannishi H 2006 J. Appl. Phys. 100 033519
[19] Tripathy S, Chua S J, Chen P and Miao Z L 2002 J. Appl. Phys. 92 3503
[20] Amano H, Iwaya M, Kashima T, Katsuragawa M, Akasaki I, Han J, Hearne S, Floro J A, Chason E and Figiel J 1998 Jpn. J. Appl. Phys. 37 L1540
[21] Heinke H, M?ller M O, Hommel D and Landwehr G 1994 J. Cryst. Growth 135 41
[22] Einfeldt S, Heinke H, Kirchner V and Hommel D 2001 J. Appl. Phys. 89 2160 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
