| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Factors Affecting the Top Stripping of GaAs Microwire Array Fabricated by Inductively Coupled Plasma Etching |
| CHENG Ying, ZOU Ji-Jun**, WAN Ming, WANG Wei-Lu, PENG Xin-Cun, FENG Lin, DENG Wen-Juan, ZHU Zhi-Fu |
Engineering Research Center of New Energy Technology and Equipment of Jiangxi Province, East China Institute of Technology, Nanchang 330013
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CHENG Ying, ZOU Ji-Jun, WAN Ming et al 2015 Chin. Phys. Lett. 32 058102 |
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Abstract The effects of different masks and patterns on the top stripping of GaAs microwire arrays fabricated by inductively coupled plasma etching for 20 min and 40 min are investigated. The results show that the mask layer is the main affect of the top stripping of the GaAs microwires in 40 min. Increasing the mask layers and reducing the photoresist layers can prevent top stripping and result in a suitable GaAs microwire array.
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Received: 18 December 2014
Published: 01 June 2015
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| PACS: |
81.07.Gf
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(Nanowires)
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81.05.Ea
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(III-V semiconductors)
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81.65.Cf
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(Surface cleaning, etching, patterning)
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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[1] Morton K J, Nieberg G, Bai S f and Chou S Y 2008 Nanotechnology 19 345301
[2] Estrera J P, Bender J E, Giordana A, Glesener J W, Iosue M J, Lin P P and Sinor T W 2000 Proc. SPIE 4128 46
[3] Liu Z, Sun Y, Peterson S and Pianetta P 2008 Appl. Phys. Lett. 92 241107
[4] Machuca F, Liu Z, Sun Y, Pianetta P, Spicer W E and Pease R F W 2002 J. Vac. Sci. Technol. B 20 2721
[5] Orlov D A, Krantz C, Wolf A, Jaroshevich A S, Kosolobov S N, Scheibler H E and Terekhov A S 2009 J. Appl. Phys. 106 054907
[6] Naoto Y, Masahiro Y, Makoto K, Ryosuke S, Takanori M, Kuniaki T, Atsushi M, Akira U, Shouji O, Tsutomu N, Masao K, Chen B, Toru U and Yoshikazu T 2007 J. Appl. Phys. 102 024904
[7] Zhao Y F, Li X H, Shi T F, Wang W B, Zhou B K, Duan H H, Zeng X S, Li N and Wang Y Q 2014 Chin. Phys. Lett. 31 056101
[8] Zhao Z F, Li X H, Wen L, Guo H M, Bu S J and Wang Y Q 2012 Chin. Phys. Lett. 29 118103
[9] Lu X L, Zhang X, Liu X L, Yan X, Cui J G, Li J S, Huang Y Q and Ren X M 2013 Chin. Phys. B 22 066101
[10] Chuang L C, Moewe M, Chase C, Kobayashi N P, ChangHasnain C and Crankshaw S 2007 Appl. Phys. Lett. 90 043115
[11] Paiano P, Prete P, Lovergine N and Mancini A M 2006 J. Appl. Phys. 100 094305
[12] Ye X, Huang H, Ren X M, Yang Y S, Guo J W, Huang Y Q and Wang Q 2010 Chin. Phys. Lett. 27 046101
[13] Bauer J, Gottschalch V, Paetzelt H, Wagner G, Fuhrmann B and Leipner H S 2007 J. Cryst. Growth 298 625
[14] Persson A I, Froberg L E, Jeppesen S, Bjork M T and Samuelson L 2007 J. Appl. Phys. 101 034313
[15] Ohlsson B J, Bjork M T, Magnusson M H, Deppert K, Samuelson L and Wallenberg L R 2001 Appl. Phys. Lett. 79 3335
[16] Yu H and Buhro W E 2003 Adv. Mater. 15 416
[17] Lee J W, Noh S H and Lee S H 2010 Thin Solid Films 518 6488
[18] Chen K, He J J, Li M Y and LaPierre R 2012 Chin. Phys. Lett. 29 036105
[19] Maeda T, Lee J W, Shul R J, Han J, Hong J, Lambers E S, Pearton S J, Abernathy C R and Hobson W S 1999 Appl. Surf. Sci. 143 174 |
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